Abstract: A pumping structure comprises at least two membranes, at least two actuation chambers, one evaluation chamber comprising an opening to the outside of the pumping structure, and at least three electrodes. Each membrane is arranged between two electrodes in a vertical direction which is perpendicular to the main plane of extension of the pumping structure, each actuation chamber is arranged between one of the membranes and one of the electrodes in vertical direction, and each actuation chamber is connected to the evaluation chamber via a channel. Furthermore, a particle detector and a method for pumping are provided.

Abstract: A pumping structure comprises at least two membranes, at least two actuation chambers, one evaluation chamber comprising an opening to the outside of the pumping structure, and at least three electrodes. Each membrane is arranged between two electrodes in a vertical direction which is perpendicular to the main plane of extension of the pumping structure, each actuation chamber is arranged between one of the membranes and one of the electrodes in vertical direction, and each actuation chamber is connected to the evaluation chamber via a channel. Furthermore, a particle detector and a method for pumping are provided.

Abstract: In order to effectively protect a particle measuring device (8) against temperatures that are too high and/or too low, it is provided that the temperature (T) of the sample gas is measured upstream of a first temperature-sensitive sample gas processing or sample gas measuring device (20, 21, 22, 42) in the particle measuring device (8) and that the measured temperature (T) is compared with a first and/or second limit value (To, Tu) and that the particle measuring device (8) is switched into a safe mode if the measured temperature (T) exceeds the first limit value (To) or falls below the second limit value (Tu).

Abstract: A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conduction type, a source region (13) of the first conduction type, a drift region (16) and a channel region (14) of a second conduction type which is opposite to the first conduction type. The drift region (16) comprises at least two stripes (15, 32) of the first conduction type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).

Abstract: A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by means of feedthroughs that extend through the semiconductor body.

Abstract: At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface (1) onto the secondmost metal plane (3) that is occupied by the metal of the secondmost metal plane (3) amounts to at least one third of the area.

Abstract: A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conduction type, a source region (13) of the first conduction type, a drift region (16) and a channel region (14) of a second conduction type which is opposite to the first conduction type. The drift region (16) comprises at least two stripes (15, 32) of the first conduction type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).

Abstract: At least one terminal contact surface (1) is formed on a topmost metal plane (2). Under it, in a secondmost metal plane (3), is a reinforcement region (8), in which the secondmost metal plane (3) is structured within its two-dimensional extent such that a part of the area of the vertical (with respect to the metal plane) projection of the terminal contact surface (1) onto the secondmost metal plane (3) that is occupied by the metal of the secondmost metal plane (3) amounts to at least one third of the area.

Abstract: A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by means of that extend through the semiconductor body.