Abstract: An optical assembly including a plurality of metamirrors, where each metamirror includes a substrate, a reflective layer formed to the substrate, an array of optical metaelements extending from the reflective layer and an array of micro-actuators coupled to the substrate opposite to the reflective layer. The combination of the micro-actuators are controlled to control the orientation and bending of the metamirrors to set how the metaelements focus a light beam that is reflected off of the reflective layers.

Abstract: A non-reciprocal band pass filter including a transmission line having a plurality of repeating finite size unit cells, where each unit cell has a predetermined length and includes an inductor and a varactor. The filter also includes a signal source providing a transmission signal that propagates on the transmission line, and a modulation source providing a modulation signal that modulates the varactor. A ratio between the predetermined length of the unit cells and a frequency of the modulation signal is selected to provide propagation modes that allow the transmission signal to propagate along the transmission line in one direction in a controlled pass band, but prevent the transmission signal from propagating along the transmission line in the opposite direction in the controlled pass band.

Abstract: A tunable antenna structure including a substrate and at least one radiating element configured on the substrate. The antenna structure further includes a plurality of nanomaterial-based phase changing material (PCM) switches configured in the radiating element so that current flowing through the radiating element passes through the PCM switches. The antenna structure also includes a heating device, such as a laser or a resistive heater, configured relative to the PCM switches and being operable to selectively heat the PCM switches to switch the PCM switches between an on crystalline state and an off amorphous state, where once the heat is removed, the PCM switch remains in the particular state.

Abstract: A microstrip transmission line comprising a dielectric substrate including a series of periodic sinusoidal undulation portions defining spaced apart peaks and troughs, where a distance between the peaks and troughs defines a period of the microstrip line, and where each peak defines a maximum height of the substrate and each trough defines a minimum height of the substrate. The transmission line further includes a conductive strip formed to a surface of the substrate so that the conductive strip follows the undulation portions. The conductive strip includes a modulation portion in a width direction of the conductive strip perpendicular to a signal propagation direction along the strip, where the modulation portion includes a minimum width portion provided at each peak and a maximum width portion provided at each trough so that a variation of a ratio between the width of the conductive strip and the height of the substrate is maximized.

Abstract: An electronic system. The electronic system includes a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point and an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point. The second waveguide-coupling point is coupled to the first circuit-coupling point; the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point; the input signal and the output signal have frequencies in a terahertz frequency range; and the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically.

Abstract: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.

Abstract: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an n+ subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an n+ narrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.

Abstract: An electronic system. The electronic system includes a waveguide structure having a first waveguide-coupling point and a second waveguide-coupling point and an active electronic circuit having a first circuit-coupling point and a second circuit-coupling point. The second waveguide-coupling point is coupled to the first circuit-coupling point; the system is capable of receiving an input signal at the first waveguide-coupling point and transmitting an output signal at the second circuit-coupling point and/or receiving the input signal at the second circuit-coupling point and transmitting the output signal at the first waveguide-coupling point; the input signal and the output signal have frequencies in a terahertz frequency range; and the system is fabricated as a monolithic integrated structure having the waveguide structure fabricated by micromachining and the circuit fabricated monolithically.