Abstract: A high speed and miniature detection system, especially for electromagnetic radiation in the GHz and THz range comprises a semiconductor structure having a 2D charge carrier layer or a quasi 2D charge carrier layer with incorporated single or multiple defects, at least first and second contacts to the charge carrier layer, and a device for measuring photovoltage between the first and second contacts. System operation in various embodiments relies on resonant excitation of plasma waves in the semiconductor structure.

Abstract: A high-speed room-temperature imaging system, especially for electromagnetic radiation in the GHz and THz frequency range, is based on the sensor consisting of a matrix of plasmonic semiconductor detectors. The imaging system comprises a radiation source module, a terahertz beam director module, a plasmonic imaging sensor module, and a signal processing module. Entire image is formed simultaneously providing for high-speed image acquisition. Images can be acquired either at a single frequency (discrete spectrum) or wide frequency bands (continuous spectrum). The imaging system can be used in defectoscopy, inspection, medical and other applications.

Abstract: A high speed miniature tera- and gigahertz electromagnetic radiation on-chip spectrometer that comprises a tunable solid state 2D charge carrier layer or a quasi 2D charge carrier layer with incorporated single or multiple defects, at least first and second contacts to the charge carrier layer. Also the device includes an apparatus for measuring the device response between the first and second contacts, and an apparatus for a controllable tuning of at least one of the charge carrier layer parameters. The operation principle is based on the fact that radiation of different wavelengths excites distinct sets of plasma modes in the charge carrier layer.

Abstract: A high speed miniature tera- and gigahertz electromagnetic radiation on-chip spectrometer that comprises a tunable solid state 2D charge carrier layer or a quasi 2D charge carrier layer with incorporated single or multiple defects, at least first and second contacts to the charge carrier layer. Also the device includes an apparatus for measuring the device response between the first and second contacts, and an apparatus for a controllable tuning of at least one of the charge carrier layer parameters. The operation principle is based on the fact that radiation of different wavelengths excites distinct sets of plasma modes in the charge carrier layer.

Abstract: A high speed and miniature detection system, especially for electromagnetic radiation in the GHz and THz range comprises a semiconductor structure having a 2D charge carrier layer or a quasi 2D charge carrier layer with incorporated single or multiple defects, at least first and second contacts to the charge carrier layer, and a device for measuring photovoltage between the first and second contacts. System operation in various embodiments relies on resonant excitation of plasma waves in the semiconductor structure.