Abstract: A semiconductor transistor device includes: a gate trench in a SiC semiconductor body; a channel region at a first side wall of the trench; and a diode region at a second side wall of the trench, the side walls lying opposite to each other in a transverse direction. As seen in a vertical cross-section perpendicular to the side walls, a first surface normal n1, perpendicular to the first side wall and pointing towards the channel region, is rotated between 174° to 178° in relation to a 4H-SiC Crystal a-direction, and a second surface normal n2, perpendicular to the second side wall and pointing towards the diode region, is rotated between ?2° to ?6° in relation to the 4H-SiC Crystal a-direction, or n1 is rotated between 178° to 182° in relation to a 4H-SiC Crystal m-direction and n2 is rotated between ?2° to 2° in relation to the 4H-SiC Crystal m-direction.

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.