Abstract: A tank housing a vertical farm, having inside a plurality of structures at different heights that are supported on the tank wall such that they create ring-shaped projections on which to place the trays for the crops and the remaining installations and channels, wherein, since the structures are arranged as rings, a hollow space is created in the central shaft of the tank that is used to install a liftable platform so that an operator or robot may access the different trays holding the vegetables, and wherein on the lower portion of the tank are located closed and sealed compartments intended for the hydraulic, electric and electronic systems for controlling the parameters necessary for crop optimisation.

Abstract: A tank housing a vertical farm, having inside a plurality of structures at different heights that are supported on the tank wall such that they create ring-shaped projections on which to place the trays for the crops and the remaining installations and channels, wherein, since the structures are arranged as rings, a hollow space is created in the central shaft of the tank that is used to install a liftable platform so that an operator or robot may access the different trays holding the vegetables, and wherein on the lower portion of the tank are located closed and sealed compartments intended for the hydraulic, electric and electronic systems for controlling the parameters necessary for crop optimisation.

Abstract: The invention relates to a semi-conductor transducer, and to the use thereof in an electron donor or electron acceptor space sensor. Said transducer consists of an insulating substrate on the surface of which two electrodes and a semiconductor sensitive element are provided. The sensitive element consists of a layer of a semiconductor molecular material M1 having a conductivity C1 and a layer of a semiconductor molecular material M2 having a conductivity C2 and a forbidden bandwidth Eg2<1 eV. The material layer M1 is in contact with the electrodes. The material layer M2 is deposited on the material layer M1 and is not in contact with the electrodes. The conductivities are such that C2/C1?1.

Abstract: The invention relates to a semi-conductor transducer, and to the use thereof in an electron donor or electron acceptor space sensor. Said transducer consists of an insulating substrate on the surface of which two electrodes and a semiconductor sensitive element are provided. The sensitive element consists of a layer of a semiconductor molecular material M1 having a conductivity C1 and a layer of a semiconductor molecular material M2 having a conductivity C2 and a forbidden bandwidth Eg2<1 eV. The material layer M1 is in contact with the electrodes. The material layer M2 is deposited on the material layer M1 and is not in contact with the electrodes. The conductivities are such that C2/C1?1.