Abstract: The present invention provides a process for plasma cleaning and an improved gas mixture for use in a plasma cleaning process. The gas mixture of the present invention includes the normal process gases such as oxygen and carbon tetrafluoride. However, the mixture also includes a small percentage of a large mass inert gas such as Argon or Krypton. This large mass gas molecule mechanically removes any polymerized fluorocarbon that forms on the surface being cleaned thereby significantly enhancing the rate of etch or cleaning.It has been found that five to twenty percent of the inert gas is the preferred range and that ten percent produces optimum results.

Abstract: A method for improving the adhesion of a polymer such as an epoxy resin to a metal such as copper wherein the metal surface to be adhered is sequentially exposed to a pressurized stream of a slurry containing suspended metal oxide particles followed by treating the metal oxide treated film in a gas plasma containing a fluorohydrocarbon.