Patents by Inventor Vicky Diadiuk

Vicky Diadiuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-high-speed photoconductive devices using semi-insulating layers
    Patent number: 5332918
    Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.
    Type: Grant
    Filed: August 31, 1992
    Date of Patent: July 26, 1994
    Assignee: Massachusetts Institute of Technology
    Inventors: Frank W. Smith, Mark A. Hollis, Arthur R. Calawa, Vicky Diadiuk, Han Q. Le
  • Ultra-high-speed photoconductive devices using semi-insulating layers
    Patent number: 5168069
    Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.
    Type: Grant
    Filed: February 17, 1989
    Date of Patent: December 1, 1992
    Assignee: Massachusetts Institute of Technology
    Inventors: Frank W. Smith, Mark A. Hollis, Arthur R. Calawa, Vicky Diadiuk, Han Q. Le
  • Lateral P-I-N photodetector
    Patent number: 4746620
    Abstract: A lateral p-i-n photodetector and a method of forming a lateral p-i-n photodetector in which p- and n-type regions are formed on a semi-insulator or i-type body by allowing metal and p-dopant compounds and metal and n-dopant compounds onto the i-type body. During alloying, p- and n-type regions are formed in the i-type body by diffusion of the dopants from the compounds, leaving the metallic compounds as n- and p-type contacts over respective p- and n-regions. In preferred embodiments, the i-material is either Fe doped InP or InGaAs.
    Type: Grant
    Filed: July 23, 1986
    Date of Patent: May 24, 1988
    Assignee: Massachusetts Institute of Technology
    Inventors: Vicky Diadiuk, Steven H. Groves