Abstract: Example embodiments relate to sub-resolution gratings in extreme ultraviolet (EUV) imaging. One example embodiment includes a mask for EUV lithography processes in a high or hyper numerical aperture range. The mask includes a mask pattern according to a mask layout. The mask layout is a superposition of a first mask sub-layout that includes a plurality of mask features to be printed and a second mask sub-layout that includes one or more sub-resolution gratings having sub-resolution grating lines. The plurality of mask features to be printed includes at least one mask feature oriented along a first direction of the mask layout. The sub-resolution grating lines extend substantially in a second direction of the mask layout and run over substantially a full width in the second direction of the mask layout. The one or more sub-resolution gratings are not printable for the high or hyper numerical aperture range.

Abstract: An extreme ultraviolet lithography mask includes a multi-layer reflector and a patterned absorber layer positioned over the multi-layer reflector. The patterned absorber layer has a thickness between 15 nm and 35 nm and a refractive index of at most 0.93. In some examples, the patterned absorber layer has a thickness between 15 nm and 30 nm.

Abstract: An example method for making a reticle includes providing an assembly. The assembly includes an extreme ultraviolet mirror and a cavity overlaying at least a bottom part of the extreme ultraviolet mirror. The method also includes at least partially filling the cavity with an extreme ultraviolet absorbing structure that includes a metallic material that includes an element selected from Ni, Co, Sb, Ag, In, and Sn, by forming the extreme ultraviolet absorbing structure selectively in the cavity.

Abstract: Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.

Abstract: An example method for making a reticle includes providing an assembly. The assembly includes an extreme ultraviolet mirror and a cavity overlaying at least a bottom part of the extreme ultraviolet mirror. The method also includes at least partially filling the cavity with an extreme ultraviolet absorbing structure that includes a metallic material that includes an element selected from Ni, Co, Sb, Ag, In, and Sn, by forming the extreme ultraviolet absorbing structure selectively in the cavity.

Abstract: Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.