Patents by Inventor Victor A. Lenchenkov

Victor A. Lenchenkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12205966
    Abstract: Long wavelength polarization sensitive image sensor devices and methods are provided. The image sensor includes pixels that each include a plurality of sub-pixels. At least some of the sub-pixels within each pixel are associated with a grid structure. Each grid structure includes two or more linear grid elements that are parallel to one another. The grid elements are disposed directly on a light incident surface of a sensor substrate in which the sub-pixels are formed, and are electrically floating. The sub-pixels can be formed as photodiodes in a silicon or other semiconductor substrate. Infrared light incident on the pixels results in the heating of the grid elements, and in particular of grid elements oriented in a direction that is parallel to a polarization of the incident light, which in turn generates a current in associated a sub-pixels. A polarization state and intensity of the incident light can be determined.
    Type: Grant
    Filed: August 21, 2023
    Date of Patent: January 21, 2025
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Victor A. Lenchenkov
  • Publication number: 20240177442
    Abstract: Sensor methods and systems incorporating an integrated illumination or light source are provided. The sensor can include a plurality of pixels and the integrated light source. The sensor can additionally include or be associated with imaging optics. The light source operates to generate illumination light that is passed through the imaging optics towards a scene within a field of view of the sensor system. Objects within the field of view reflect light that is collected by the imaging optics and passed to at least some of the pixels. In at least some configurations, an output of the light source is located adjacent the pixels, and provides the illumination light to the imaging optics by reflecting the illumination light from at least some of the pixels. In other configurations, the light source excites pixel elements, which then produce illumination light that is provided to the imaging optics.
    Type: Application
    Filed: November 28, 2022
    Publication date: May 30, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Victor A. Lenchenkov
  • Publication number: 20240176053
    Abstract: Sensors and systems are provided. A sensor as disclosed includes a plurality of pixels disposed within an array. Each pixel is associated with a hyperspectral filter including a metamaterial and a metal grating capable of passing light of a particular wavelength range through to an image sensor. Systems include the use of an aluminum grating separated from a metamaterial including TiO2 and Si3N4 by a SiO2 coupling layer as a filter mounted on a substrate.
    Type: Application
    Filed: November 30, 2022
    Publication date: May 30, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Trevor O'Loughlin, Gui Gui, Frederick T Brady, Sungin Han, Victor A. Lenchenkov
  • Publication number: 20240151884
    Abstract: Color image sensors and systems are provided. A sensor as disclosed includes a plurality of color sensing pixels disposed within an array, each of which includes a plurality of sub-pixels. Each color sensing pixel within the image sensor is associated with a set of diffraction features disposed in a plurality of diffraction element layers. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. At least one of the diffraction element layers is formed in a grating substrate on a light incident side of a sensor substrate. Color information regarding light incident on a pixel is determined by applying ratios of signals obtained by pairs of included sub-pixels and calibrated ratios for different colors to a set of equations. A solution to the set of equations provides the relative contributions of the calibrated colors to the incident light.
    Type: Application
    Filed: November 9, 2022
    Publication date: May 9, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Victor A. Lenchenkov
  • Publication number: 20240151583
    Abstract: Wavelength determining image sensors and systems are provided. A sensor as disclosed includes a number of pixels disposed within an array, each of which includes a plurality of sub-pixels. Each wavelength sensing pixel within the image sensor is associated with a set of diffraction features disposed in a plurality of diffraction element layers. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. At least one of the diffraction element layers is formed in a grating substrate on a light incident side of a sensor substrate. Wavelength information regarding light incident on a pixel is determined by applying ratios of signals obtained from pairs of included sub-pixels and calibrated ratios for different wavelengths to a set of equations. A solution to the set of equations provides the relative contributions of the calibrated wavelengths to the incident light.
    Type: Application
    Filed: November 9, 2022
    Publication date: May 9, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Victor A. Lenchenkov
  • Publication number: 20240063240
    Abstract: Light state image sensors and systems are provided. The light state image sensor includes a plurality of pixels, each of which includes a plurality of sub-pixels. A diffraction layer is disposed adjacent a light incident surface side of the array includes a set of electrically conductive or semiconductive diffraction features for each pixel. Each set of diffraction features includes linear elements disposed along different radii extending from a centerline of the respective pixel. Non-linear scattering elements can also be included in each set of diffraction features. Light state information, such as color and polarization state, of light incident on a pixel is determined by comparing ratios of signals between pairs of sub-pixels to values stored in a calibration table.
    Type: Application
    Filed: August 18, 2022
    Publication date: February 22, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Victor A. Lenchenkov
  • Publication number: 20230387160
    Abstract: Color image sensors and systems are provided. A color image sensor as disclosed includes a plurality of pixels disposed within an array, each of which includes a plurality of sub-pixels. A diffraction layer is disposed adjacent a light incident surface side of the array of pixels. The diffraction layer provides a set of transparent diffraction features for each pixel. The diffraction features focus and diffract light onto the sub-pixels of the respective pixel. Color information regarding light incident on a pixel is determined by comparing ratios of signals between pairs of sub-pixels to a calibration table containing ratios of signals determined using incident light at a number of different, known wavelengths. A wavelength with signal ratios that result in a smallest difference as compared to the observed set of signal ratios is assigned as a color of the light incident on the pixel.
    Type: Application
    Filed: May 24, 2022
    Publication date: November 30, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Victor A. Lenchenkov