Abstract: A reader of a magnetic recording head includes a sensor stack, a first side shield and a second side shield disposed on opposite sides of the sensor stack in a cross-track dimension, and a bridge. The bridge is configured to align magnetic moments of the first side shield and the second side shield. The bridge is disposed above the sensor stack relative to a media-facing surface of the magnetic recording head and proximate to the first side shield and the second side shield.

Abstract: A reader of a magnetic recording head includes a sensor stack, a first side shield and a second side shield disposed on opposite sides of the sensor stack in a cross-track dimension, and a bridge. The bridge is configured to align magnetic moments of the first side shield and the second side shield. The bridge is disposed above the sensor stack relative to a media-facing surface of the magnetic recording head and proximate to the first side shield and the second side shield.

Abstract: A read sensor that includes an unbalanced synthetic antiferromagnetic (SAF) free layer structure. The unbalanced SAF free layer structure includes a first magnetic layer having a first magnetic moment value and a second magnetic layer having a second magnetic moment value that is different from the first magnetic moment value. A separation layer is included between the first magnetic layer and the second magnetic layer. The first magnetic layer and the second magnetic layer are antiferromagnetically coupled.

Abstract: A read sensor that includes an unbalanced synthetic antiferromagnetic (SAF) free layer structure. The unbalanced SAF free layer structure includes a first magnetic layer having a first magnetic moment value and a second magnetic layer having a second magnetic moment value that is different from the first magnetic moment value. A separation layer is included between the first magnetic layer and the second magnetic layer. The first magnetic layer and the second magnetic layer are antiferromagnetically coupled.

Abstract: In certain embodiments, an apparatus includes a magnetoresistive (MR) sensor having a first and second electrode positioned at a first side of the MR sensor and a third electrode positioned at a second side of the MR sensor opposite the first side. In certain embodiments, an apparatus includes first and second electrodes coupled to an MR sensor and positioned at a first side of the MR sensor. The first and second electrodes are spaced apart from each other and are positioned over an area of the MR sensor that has a positive or negative asymmetry.

Abstract: In certain embodiments, an apparatus includes a magnetoresistive (MR) sensor having a first and second electrode positioned at a first side of the MR sensor and a third electrode positioned at a second side of the MR sensor opposite the first side.

Abstract: A magnetic sensor includes a sensor stack having a sensing layer. A first biasing structure having a first magnetization vector is positioned adjacent to the sensor stack to produce a biasing field that biases the sensing layer. A second biasing structure having a second magnetization vector is positioned within the sensor stack relative to the sensing layer to counter the biasing field at a center of the sensing layer.

Abstract: A magnetoresistive sensor having two free layers with shape anisotropy induced magnetic alignment is disclosed. The magnetoresistive sensor includes a first ferromagnetic free layer having a first quiescent state magnetization direction. The magnetoresistive sensor also includes a second elongated free layer having a second quiescent state magnetization direction and positioned such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction. Further, a portion of the second ferromagnetic free layer overlaps a portion of the first ferromagnetic free layer proximal to an air bearing surface to form a v-shape. A nonmagnetic spacer layer is also positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.

Abstract: Data is written to a magnetic media, by applying a magnetic write field to the magnetic media with a write pole, in conjunction with a high frequency magnetic field, to the magnetic media to assist writing to the magnetic media. The high frequency magnetic field is generated by applying a specific write current waveform to the magnetic writer, resulting in the generation of a high frequency magnetic write field.

Abstract: A thin film structure is formed by simultaneously depositing at least two components onto a substantially planar substrate. Each component is deposited from a deposition direction different than the deposition directions from which the remaining components are deposited. The deposition directions are measured in a plane of the thin film structure. Each component is further deposited at a deposition angle which is measured with respect to a line perpendicular to the plane of the thin film structure. The deposition angles and deposition directions of the at least two components are oriented to cause the thin film structure to have atomic-scale lateral composition modulations.