Abstract: A magnetic element has a magnetically responsive lamination with a ferromagnetic free layer separated from a synthetic antiferromagnetic (SAF) layer by a spacer layer and from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The lamination is coupled to at least one antiferromagnetic (AFM) tab a predetermined offset distance from the ABS.

Abstract: A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.

Abstract: Various embodiments can have a magnetically responsive stack positioned on an air bearing surface (ABS) and disposed between at least first and second magnetic shields. Each magnetic shield may have a beveled portion distal to the ABS. The magnetically responsive stack can have a cross-track magnetization anisotropy proximal to the ABS.

Abstract: A magnetic element has a magnetically responsive lamination with a ferromagnetic free layer separated from a synthetic antiferromagnetic (SAF) layer by a spacer layer and from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The lamination is coupled to at least one antiferromagnetic (AFM) tab a predetermined offset distance from the ABS.

Abstract: An apparatus that includes a first read shield and a second read shield and a reader stack between the first and second read shields. The first and second read shields each include a thin high permeability layer closest to the reader stack and a low permeability layer and/or a geometric feature to control magnetic field flux lines in a free layer of the reader stack.

Abstract: An apparatus and associated method for a magnetic element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a free layer that has a first areal extent that is sensitive to a magnetic field and a synthetic antiferromagnetic (SAF) layer adjacent to the free layer and has a second areal extent that is greater than the first areal extent.

Abstract: A method of creating a stack having multiple layers of deposited film onto a substrate is discussed. The method includes depositing a first layer of a first material onto the substrate and depositing a second layer onto the first layer. Depositing the second layer includes depositing a first amount of the second material onto the first layer at a first deposition temperature selected to set the normalized diffusion activation energy of the second material.

Abstract: A magnetoresistive sensor having two free layers with shape anisotropy induced magnetic alignment is disclosed. The magnetoresistive sensor includes a first ferromagnetic free layer having a first quiescent state magnetization direction. The magnetoresistive sensor also includes a second elongated free layer having a second quiescent state magnetization direction and positioned such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction. Further, a portion of the second ferromagnetic free layer overlaps a portion of the first ferromagnetic free layer proximal to an air bearing surface to form a v-shape. A nonmagnetic spacer layer is also positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.