Abstract: The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a method of depositing a thin film comprises alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors. Exposing the substrate comprises introducing one of the precursors into the thin film deposition chamber through two or more atomic layer deposition (ALD) valves each configured to supply the one of the precursors.

Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.

Abstract: Embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. Specifically, embodiments relate to grids to improve plasma uniformity. In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.

Abstract: A showerhead assembly configured to deliver a plurality of gases into a cyclic deposition chamber comprises a showerhead comprising a vertical cavity formed through a central region and a main inner surface configured to face a substrate. The main inner surface radially surrounds the vertical cavity and is tapered such that a vertical distance from the substrate to the main inner surface decreases in a radially outward direction relative a center of the substrate. The showerhead assembly additionally comprises an injector block assembly disposed over the showerhead for delivering the gases from outside of the cyclic deposition chamber into the cyclic deposition chamber through the vertical cavity. The showerhead assembly further comprises a plurality of gas channels formed in the injector block assembly.

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

Abstract: A process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. The one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.

Abstract: A temperature-controlled showerhead assembly is configured to deliver a plurality of gases into a cyclic deposition chamber. The showerhead assembly comprises a showerhead body having a cavity formed therethrough and at a central region thereof, wherein the cavity is configured to diffuse or mix the gases prior to introducing the gases into the deposition chamber. The showerhead assembly additionally comprises a network of cooling channels configured to conduct heat away from the showerhead body. The showerhead assembly further comprises a network of heating elements configured to supply heat to the showerhead body, wherein the network of heating elements is disposed closer to the an upper surface of the showerhead body relative to the cooling channels.

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.

Abstract: The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a thin film deposition system comprises a thin film deposition chamber configured to deposit a thin film by alternatingly exposing a substrate to a plurality of precursors. The thin film system additionally comprises a precursor source connected to the thin film deposition chamber by a precursor delivery line, wherein the precursor delivery line comprises a high conductance line portion between the precursor source and a final valve outside of the thin film deposition chamber. The high conductance line portion is elongated in a flow direction and has a conductance that is at least four times greater than either of immediately adjacent low conductance line portions connected at opposing ends of the high conductance line portion.

Abstract: The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a method of depositing a thin film comprises alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors. Exposing the substrate comprises introducing one of the precursors into the thin film deposition chamber through two or more atomic layer deposition (ALD) valves each configured to supply the one of the precursors.

Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.