Patents by Inventor Victor E. Quintana

Victor E. Quintana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer
    Patent number: 5086004
    Abstract: An isolation structure and method of fabrication thereof for use in isolation of p-n junctions and for use in multiplexed, multi-color LED arrays. The isolation structure is fabricated on a structure which has a p-n junction formed on a semi-insulating substrate by (1) diffusing dopants into predetermined regions thereof from the top of the structure to the semi-insulating substrate, the dopants being of the same dopant type as that contained in the top layer of the p-n junction and (2) ion-implanting predetermined regions of the top layer of the p-n junction to render them non-conductive.
    Type: Grant
    Filed: June 1, 1990
    Date of Patent: February 4, 1992
    Assignee: Polaroid Corporation
    Inventor: Victor E. Quintana
  • Isolation of p-n junctions
    Patent number: 4956683
    Abstract: An isolation structure and method of fabrication thereof for use in isolation of p-n junctions and for use in multiplexed, multi-color LED arrays. The isolation structure is fabricated on a structure which has a p-n junction formed on a semi-insulating substrate by (1) diffusing dopants into predetermined regions thereof from the top of the structure to the semi-insulating substrate, the dopants being of the same dopant type as that contained in the top layer of the p-n junction and (2) ion-implanting predetermined regions of the top layer of the p-n junction to render them non-conductive.
    Type: Grant
    Filed: March 14, 1988
    Date of Patent: September 11, 1990
    Assignee: Polaroid Corporation
    Inventor: Victor E. Quintana