Abstract: A transistor driver circuit with a plurality of transistors, each having source and drain regions formed in a substrate. At least first and second interconnect layers are formed on top of the substrate. A first plurality of contacts connect the source regions to one of the first or second interconnect layers. A second plurality of contacts connect the drain regions to the other of the first or second interconnect layers. The first and second interconnect layers cover a region above the substrate area in which the plurality of transistors reside so as to achieve a low ohmic result. The second interconnect layer has openings therein for one of the respective first or second plurality of contacts to pass therethrough and couple to the at least one first interconnect layer. Either the first or second interconnect layers can function as an input or output for the circuit.

Abstract: A transistor driver circuit with a plurality of transistors, each having source and drain regions formed in a substrate. At least first and second interconnect layers are formed on top of the substrate. A first plurality of contacts connect the source regions to one of the first or second interconnect layers. A second plurality of contacts connect the drain regions to the other of the first or second interconnect layers. The first and second interconnect layers cover a region above the substrate area in which the plurality of transistors reside so as to achieve a low ohmic result. The second interconnect layer has openings therein for one of the respective first or second plurality of contacts to pass therethrough and couple to the at least one first interconnect layer. Either the first or second interconnect layers can function as an input or output for the circuit.

Abstract: A padring formed on a semi conductive substrate die provides Electro Static Discharge (ESD) protection for a Radio Frequency (RF) circuit also formed on the semi conductive substrate die. The padring includes a voltage supply rail, a ground rail, a plurality of signal pad structures, and a plurality of voltage clamps. The plurality of signal pad structures are disposed between the voltage supply rail and the ground rail. Each signal pad structure includes a signal pad that couples to the RF circuit, a voltage supply path diode disposed between and coupled between the signal pad and the voltage supply rail, and a ground path diode disposed between and coupled between the signal pad and the voltage supply rail. The plurality of voltage clamps are disposed between and coupled between the voltage supply rail and the ground rail.

Abstract: A method of making a transistor driver circuit with a plurality of transistors, each having source and drain regions formed in a substrate. At least first and second interconnect layers are formed on top of the substrate. A first plurality of contacts connect the source regions to one of the first or second interconnect layers. A second plurality of contacts connect the drain regions to the other of the first or second interconnect layers. The first and second interconnect layers cover a region above the substrate area in which the plurality of transistors reside so as to achieve a low ohmic result. The second interconnect layer has openings therein for one of the respective first or second plurality of contacts to pass therethrough and couple to the at least one first interconnect layer. Either the first or second interconnect layers can function as an input or output for the circuit.

Abstract: A method of making a transistor driver circuit with a plurality of transistors, each having source and drain regions formed in a substrate. At least first and second interconnect layers are formed on top of the substrate. A first plurality of contacts connect the source regions to one of the first or second interconnect layers. A second plurality of contacts connect the drain regions to the other of the first or second interconnect layers. The first and second interconnect layers cover a region above the substrate area in which the plurality of transistors reside so as to achieve a low ohmic result. The second interconnect layer has openings therein for one of the respective first or second plurality of contacts to pass therethrough and couple to the at least one first interconnect layer. Either the first or second interconnect layers can function as an input or output for the circuit.

Abstract: The disclosure relates to a transistor driver circuit with a plurality of transistors, each having source and drain regions formed in a substrate. At least first and second interconnect layers are formed on top of the substrate. A first plurality of contacts connect the source regions to one of the first or second interconnect layers. A second plurality of contacts connect the drain regions to the other of the first or second interconnect layers. The first and second interconnect layers cover a region above the substrate area in which the plurality of transistors reside so as to achieve a low ohmic result. The second interconnect layer has openings therein for one of the respective first or second plurality of contacts to pass therethrough and couple to the at least one first interconnect layer. Either the first or second interconnect layers can function as an input or output for the circuit.

Abstract: The disclosure relates to a transistor driver circuit with a plurality of transistors, each having source and drain regions formed in a substrate. At least first and second interconnect layers are formed on top of the substrate. A first plurality of contacts connect the source regions to one of the first or second interconnect layers. A second plurality of contacts connect the drain regions to the other of the first or second interconnect layers. The first and second interconnect layers cover a region above the substrate area in which the plurality of transistors reside so as to achieve a low ohmic result. The second interconnect layer has openings therein for one of the respective first or second plurality of contacts to pass therethrough and couple to the at least one first interconnect layer. Either the first or second interconnect layers can function as an input or output for the circuit.

Abstract: A padring formed on a semi conductive substrate die provides Electro Static Discharge (ESD) protection for a Radio Frequency (RF) circuit also formed on the semi conductive substrate die. The padring includes a voltage supply rail, a ground rail, a plurality of signal pad structures, and a plurality of voltage clamps. The plurality of signal pad structures are disposed between the voltage supply rail and the ground rail. Each signal pad structure includes a signal pad that couples to the RF circuit, a voltage supply path diode disposed between and coupled between the signal pad and the voltage supply rail, and a ground path diode disposed between and coupled between the signal pad and the voltage supply rail. The plurality of voltage clamps are disposed between and coupled between the voltage supply rail and the ground rail.