Abstract: A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.

Abstract: A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.

Abstract: Capacitance between interconnects lines of a semiconductor device is reduced by providing air voids between the interconnects. The air voids are produced by depositing a dielectric over and partially between the pairs of interconnects and the substrate between them, and etching (preferably by sputter etch) in a controlled and coordinated manner so as to produce air voids in the dielectric between the interconnects. The tops of the air voids are below the level to which the uppermost surfaces of the interconnect is then exposed during subsequent processing so that the air voids remain intact during such subsequent processing.