Abstract: Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a plurality of pages in the flash memory device. Per-page control is provided of the number of sectors in each page, as well the code and/or code rate used for encoding and decoding a given page, and the decoder or decoding algorithm used for decoding a given page. Multi-page and wordline level access schemes are also provided.

Abstract: Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a plurality of pages in the flash memory device. Per-page control is provided of the number of sectors in each page, as well as the code and/or code rate used for encoding and decoding a given page, and the decoder or decoding algorithm used for decoding a given page. Multi-page and wordline level access schemes are also provided.

Abstract: Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a plurality of pages in the flash memory device. Per-page control is provided of the number of sectors in each page, as well as the code and/or code rate used for encoding and decoding a given page, and the decoder or decoding algorithm used for decoding a given page. Multi-page and wordline level access schemes are also provided.

Abstract: Methods and apparatus are provided for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding. A single sector can be stored across a plurality of pages in the flash memory device. Per-page control is provided of the number of sectors in each page, as well as the code and/or code rate used for encoding and decoding a given page, and the decoder or decoding algorithm used for decoding a given page. Multi-page and wordline level access schemes are also provided.

Abstract: Various embodiments of the present invention provide apparatuses and methods for encoding and decoding data.

Abstract: Embodiments of the present inventions are related to systems and methods for data processing, and more particularly to systems and methods for format efficient data processing.

Abstract: Methods and apparatus are provided for programming multiple program values per signal level in flash memories. A flash memory device having a plurality of program values is programmed by programming the flash memory device for a given signal level, wherein the programming step comprises a programming phase and a plurality of verify phases. In another variation, a flash memory device having a plurality of program values is programmed, and the programming step comprises a programming phase and a plurality of verify phases, wherein at least one signal level comprises a plurality of the program values. The signal levels or the program values (or both) can be represented using one or more of a voltage, a current and a resistance.

Abstract: Methods and apparatus are provided for trellis-based modulation encoding. A signal is modulation encoded by encoding one or more blocks of the signal using one or more corresponding edges in a trellis, wherein each edge in the trellis has a corresponding bit pattern; selecting a winning path through the trellis based on at least one transition-based run-length constraint; and generating an encoded sequence using edges associated with the winning path. Exemplary trellis pruning techniques are also provided. The winning path through the trellis is selected by minimizing one or more modulation metrics.

Abstract: Methods and apparatus are provided for write-side intercell interference mitigation in flash memories. A flash memory device is written by obtaining program data to be written to at least one target cell in the flash memory; obtaining one or more bits of program data for at least one aggressor cell to be programmed later than the target cell: and precompensating for intercell interference for the target cell by generating precompensated program values. The aggressor cells comprise one or more cells adjacent to the target cell, such as adjacent cells in a same wordline as the target cell and/or cells in an upper or lower adjacent wordline to the target cell. The precompensated program values for the target cell are optionally provided to the flash memory.

Abstract: Methods and apparatus are provided for read-side intercell interference mitigation in flash memories. A flash memory device is read by obtaining a read value for at least one target cell; obtaining a value representing a voltage stored in at least one aggressor cell that was programmed after the target cell; determining intercell interference for the target cell from the at least one aggressor cell; and obtaining a new read value that compensates for the intercell interference by removing the determined intercell interference from the read value for the at least one target cell. The new read value can optionally be provided to a decoder. In an iterative implementation, one or more intercell interference mitigation parameters can be adjusted if a decoding error occurs.

Abstract: Various embodiments of the present invention provide apparatuses and methods for encoding and decoding data.

Abstract: Various embodiments of the present invention provide apparatuses, systems and methods for data detection in a detector with soft pruning. For example, a data detector is disclosed that includes a branch metric calculator operable to calculate branch metrics for transitions between states in a trellis for the data detector, and a branch metric offset circuit operable to apply branch metric offsets to the branch metrics to yield soft pruned branch metrics. The branch metric offsets comprise a range of probability values from zero percent to one hundred percent.

Abstract: Various embodiments of the present invention provide systems, devices and methods for data processing. As an example, a data processing device is discussed that include a data encoding system and a data decoding system. The data encoding system is operable to receive a data input, and to: apply a maximum transition run length encoding to the data input to yield a run length limited output; apply a low density parity check encoding algorithm to the run length limited output to yield a number of original parity bits; apply a precode algorithm to the original parity bits to yield precoded parity bits; and combine the precoded parity bits and a derivative of the run length limited output to yield an output data set.

Abstract: Various embodiments of the present invention provide systems and methods for data processing. As an example, a data processing circuit is disclosed that includes a data detector circuit. The data detector circuit includes an anti-causal noise predictive filter circuit and a data detection circuit. In some cases, the anti-causal noise predictive filter circuit is operable to apply noise predictive filtering to a detector input to yield a filtered output, and the data detection circuit is operable to apply a data detection algorithm to the filtered output derived from the anti-causal noise predictive filter circuit.

Abstract: Methods and apparatus are provided for trellis-based modulation encoding. A signal is modulation encoded by encoding one or more blocks of the signal using one or more corresponding edges in a trellis, wherein each edge in the trellis has a corresponding bit pattern; selecting a winning path through the trellis based on at least one transition-based run-length constraint; and generating an encoded sequence using edges associated with the winning path. Exemplary trellis pruning techniques are also provided. The winning path through the trellis is selected by minimizing one or more modulation metrics.

Abstract: Methods and apparatus are provided for soft data generation for memory devices. At least one soft data value is generated for a memory device, by obtaining at least one hard read value; and generating the soft data value associated with the at least one hard read value based on statistics for reading the hard read value. The hard read value may be one or more of data bits, voltage levels, current levels and resistance levels. The generated soft data value may be one or more of (i) a soft read value that is used to generate one or more log likelihood ratios, and (ii) one or more log likelihood ratios. The statistics comprise one or more of bit-based statistics and cell-based statistics. The statistics may also optionally comprise pattern-dependent disturbance of at least one aggressor cell on the target cell, as well as location-specific statistics.

Abstract: Methods and apparatus for soft data generation for memory devices using decoder performance feedback. At least one soft data value is generated in a memory device, by obtaining performance feedback from a decoder; obtaining an error statistic based on the performance feedback; and generating the at least one soft data value based on the obtained error statistic. The performance feedback comprises one or more of decoded bits, a number of erroneous bits based on data decoded by the decoder and a number of unsatisfied parity checks.

Abstract: Methods and apparatus are provided for soft data generation for memory devices using reference cells. At least one soft data value is generated in a memory device by writing a known data to one or more reference cells; reading one or more of the reference cells; obtaining a read statistic based on the read one or more reference cells; and obtaining the at least one soft data value based on the obtained read statistic. The read statistics can optionally be obtained for one or more desired locations of a memory array; or for a given pattern, PATT, in one or more aggressor cells. The read statistic can optionally comprise asymmetric statistics obtained for a plurality of possible values.

Abstract: Methods and apparatus are provided for intercell interference mitigation using modulation coding. During programming of a flash memory, a modulation encoding is performed that selects one or more levels for programming the flash memory such that a reduced number of cells in the flash memory are programmed with a value that violates one or more predefined criteria. During a reading of a flash memory, a modulation decoding is performed that assigns one or more levels to cells in the flash memory such that a reduced number of cells in the flash memory are read with a value that violates one or more predefined criteria. The predefined criteria can be based, for example, on one or more of an amount of disturbance caused by the programmed cell; a voltage shift of a programmed cell: a voltage stored by a programmed cell; an amount of change in current through a programmed cell; and an amount of current through a programmed cell.

Abstract: Methods and apparatus are provided for write-side intercell interference mitigation in flash memories. A flash memory device is written by obtaining program data to be written to at least one target cell in the flash memory; obtaining one or more bits of program data for at least one aggressor cell to be programmed later than the target cell: and precompensating for intercell interference for the target cell by generating precompensated program values. The aggressor cells comprise one or more cells adjacent to the target cell, such as adjacent cells in a same wordline as the target cell and/or cells in an upper or lower adjacent wordline to the target cell. The precompensated program values for the target cell are optionally provided to the flash memory.