Abstract: A semiconductor device is disclosed that includes a semiconductor die, a metal leadframe, and a metal strap. A bottom surface of the semiconductor device is on and electrically coupled to a first portion of the leadframe. A first end portion of the metal strap is on and electrically coupled to a top surface of the semiconductor die. An opposite, second end portion of the metal strap is on and electrically coupled to a second portion of the leadframe within a recess of the second portion of the leadframe.

Abstract: This invention provides a method apparatus for electrically connecting a semiconductor die, such as a power MOSFET, to a substrate on which the die is mounted, e.g., a lead frame, with a conductive strap, such that the connection is resistant to the shear stresses incident upon it with changes in temperature of the device. The method includes providing a conductive strap, and in one embodiment thereof, forming a recess in the top surface of the substrate. The bottom surface of a flange portion of the strap is attached to the floor of the recess such that the recess captures the flange and prevents relative horizontal movement of the flange and substrate with variations in the temperature of the device. Other embodiments include attaching the strap to the die and substrate with joints of a resilient conductive elastomer, and forming apertures in the strap and substrate that cooperate with a conductive joint material to reinforce the connection against temperature-induced shear forces.