Patents by Inventor Victor M. Benveniste
Victor M. Benveniste has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10049861Abstract: Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface seals the volume of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.Type: GrantFiled: November 16, 2015Date of Patent: August 14, 2018Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Victor M. Benveniste, Svetlana Radovanov, Costel Biloiu
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Publication number: 20160379799Abstract: A system includes a first electrode to receive an ion beam, a second electrode to receive the ion beam after passing through the first electrode, the first and second electrode forming an upstream gap defined by a convex surface on one of the first or second electrode and concave surface on the other electrode, a third electrode to receive the ion beam after passing through the second electrode, wherein the second and third electrode form a downstream gap defined by a convex surface on one of the second or third electrode and concave surface on the other electrode, wherein the second electrode has either two concave surfaces or two convex surfaces; and a voltage supply system to independently supply voltage signals to the first, second and third electrode, that accelerate and decelerate the ion beam as it passes through the first, second, and third electrode.Type: ApplicationFiled: September 12, 2016Publication date: December 29, 2016Inventors: Frank Sinclair, Victor M. Benveniste
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Patent number: 9297063Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.Type: GrantFiled: April 26, 2012Date of Patent: March 29, 2016Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Svetlana B. Radovanov, Victor M. Benveniste, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
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Publication number: 20160071704Abstract: Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface seals the volume of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.Type: ApplicationFiled: November 16, 2015Publication date: March 10, 2016Inventors: Victor M. Benveniste, Svetlana Radovanov, Costel Biloiu
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Publication number: 20150144810Abstract: A system includes a first electrode to receive an ion beam, a second electrode to receive the ion beam after passing through the first electrode, the first and second electrode forming an upstream gap defined by a convex surface on one of the first or second electrode and concave surface on the other electrode, a third electrode to receive the ion beam after passing through the second electrode, wherein the second and third electrode form a downstream gap defined by a convex surface on one of the second or third electrode and concave surface on the other electrode, wherein the second electrode has either two concave surfaces or two convex surfaces; and a voltage supply system to independently supply voltage signals to the first, second and third electrode, that accelerate and decelerate the ion beam as it passes through the first, second, and third electrode.Type: ApplicationFiled: November 27, 2013Publication date: May 28, 2015Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Frank Sinclair, Victor M. Benveniste
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Patent number: 8847496Abstract: An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.Type: GrantFiled: May 22, 2013Date of Patent: September 30, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter F. Kurunczi, Victor M. Benveniste, Oliver V. Naumovski
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Patent number: 8604443Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.Type: GrantFiled: November 11, 2010Date of Patent: December 10, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Frank Sinclair, Victor M. Benveniste, Svetlana Radovanov, James S. Buff
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Publication number: 20130320854Abstract: An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.Type: ApplicationFiled: May 22, 2013Publication date: December 5, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter F. Kurunczi, Victor M. Benveniste, Oliver V. Naumovski
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Publication number: 20130287964Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.Type: ApplicationFiled: April 26, 2012Publication date: October 31, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Svetlana B. Radovanov, Victor M. Benveniste, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
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Patent number: 8471476Abstract: A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma.Type: GrantFiled: October 8, 2010Date of Patent: June 25, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter F. Kurunczi, Victor M. Benveniste, Oliver V. Naumovski
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Publication number: 20130015053Abstract: Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface forms a wall of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.Type: ApplicationFiled: July 12, 2011Publication date: January 17, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Victor M. Benveniste, Svetlana Rdovanov, Costel Biloiu
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Publication number: 20130001414Abstract: A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.Type: ApplicationFiled: July 1, 2011Publication date: January 3, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Victor M. Benveniste, Frank Sinclair, Svetlana Radovanov, Bon-Woong Koo
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Publication number: 20120168622Abstract: An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.Type: ApplicationFiled: December 29, 2010Publication date: July 5, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Victor M. Benveniste, Frank Sinclair, Svetlana Radovanov, Bon-Woong Koo
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Publication number: 20120085917Abstract: A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma.Type: ApplicationFiled: October 8, 2010Publication date: April 12, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter F. Kurunczi, Victor M. Benveniste, Oliver V. Naumovski
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Publication number: 20110114849Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.Type: ApplicationFiled: November 11, 2010Publication date: May 19, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , INC.Inventors: Frank Sinclair, Victor M. Benveniste, Svetlana Radovanov, James S. Buff
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Patent number: 7888653Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.Type: GrantFiled: January 2, 2009Date of Patent: February 15, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Svetlana Radovanov, Frank Sinclair, Victor M. Benveniste
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Patent number: 7820988Abstract: An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.Type: GrantFiled: October 2, 2008Date of Patent: October 26, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Victor M. Benveniste, Antonella Cucchetti, Bon-Woong Koo
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Publication number: 20100200768Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.Type: ApplicationFiled: February 12, 2009Publication date: August 12, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL
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Publication number: 20100171042Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.Type: ApplicationFiled: January 2, 2009Publication date: July 8, 2010Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. KELLERMAN, Svetlana Radovanov, Frank Sinclair, Victor M. Benveniste
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Patent number: 7748344Abstract: An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.Type: GrantFiled: November 6, 2003Date of Patent: July 6, 2010Assignee: Axcelis Technologies, Inc.Inventors: William F. DiVergilio, Victor M. Benveniste, Peter L. Kellerman