Abstract: The disclosed subject matter relates to a block polymer comprising structure (1): (A)-(C)-(B), wherein (A) is a first polymer block segment comprising a block segment selected from structure (1a), structure (1b), and a mixture of structures (1a) an (1b), (C) is a spacer moiety comprising structure (1c); and wherein B) is a second polymer block segment comprising repeat units derived from either an alkyl 2-methylenealkanoate, a lactone; a cyclic carbonate, an oxirane, or an oxetane. The disclose matter also pertains to a composition of said block polymer in a spin casting solvent and using this solution in a process of directed self-assembly.

Abstract: The present invention relates to a composition comprising components a), b) and c). The component a) is a block copolymer or a blend of block copolymers. The component b) is a low Tg additive selected from the group consisting of an oligo random oligo random copolymer b-1), an oligo diblock copolymer b-2), an oligo diblock copolymer b-3) and a mixture of at least two of these. The component c) is a is a spin casting organic solvent. The invention also pertains to the use of said compositions in directed self-assembly. The invention further pertains to the novel oligo diblock copolymer b-2) which is an oligo diblock copolymer of block A-b) and block B-b), wherein block A-b) is a random copolymer of repeat units having structures (III), and (IV and block B-b) is a random copolymer of repeat units having structures (V), and (VI). Formulas (III), (IV), (V), (VI).

Abstract: The present invention relates to a random copolymer comprising repeat units of structure (I), (II), (III), and (IV). The invention also pertains to a neutral layer composition comprised of said random copolymer and also pertains to the use of said neutral layer composition to make a crosslinked neutral layer film on a substrate, which can enable self-assembly of a film of a block copolymer overlying said crosslinked neutral layer, wherein said block copolymer contains etch resistant and etchable block, and whose self-assembled pattern is used, through etching, to create either an array of contact holes or posts in said substrate.

Abstract: A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) flood exposing the second photoresist; and, g) developing the flood exposed second photoresist to form a photoresist pattern with increased dimensions and reduced spaces.