Patents by Inventor Victor P. C. Yeh

Victor P. C. Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Design of high-frequency substrate noise isolation in BiCMOS technology
    Patent number: 7511346
    Abstract: A high-frequency noise isolation structure and a method for forming the same are provided. The noise isolation structure isolates a first device region and a second device region over a semiconductor substrate. The noise isolation structure preferably includes a sinker region substantially encircling a first device region, a buried layer underlying the first device region and joining the sinker region, a deep guard ring substantially encircling the sinker region, and a deep trench oxide region substantially encircling the sinker region. The isolation structure further includes a wide guard ring between the first and the second device regions. The sinker region and the buried region preferably have a high impurity concentration. Integrated circuits to be noise decoupled are preferably formed in the respective first and second device regions.
    Type: Grant
    Filed: December 27, 2005
    Date of Patent: March 31, 2009
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Der-Chyang Yeh, Chuan-Ying Lee, Victor P. C. Yeh