Abstract: Described are embodiments of a lithium metal phosphate production methods and systems. The systems and methods can include combining lithium extraction from spodumene, lithium recycling from lithium ion battery (“LIB”) black mass, and/or lithium metal phosphate synthesis from metal phosphates.

Abstract: Described are embodiments of a lithium metal phosphate production methods and systems. The systems and methods can include combining lithium extraction from spodumene, lithium recycling from lithium ion battery (“LIB”) black mass, and/or lithium metal phosphate synthesis from metal phosphates.

Abstract: An electrode active material includes a dopant (M2) and a lithium iron phosphate host material, where the electrode active material is represented as LiM2xFe1?xPO4; M2 is a transition metal or main group metal; x is 0.01 to 0.15; the electrode active material exhibits an increased ionic conductivity compared to a lithium iron phosphate (LiFePO4) without the dopant; and the electrode active material has a particle size distribution characterized by a D50 greater than or equal to 1 ?m.

Abstract: A cathode active material includes a bulk nickel-rich cathode active material having a lithium metal oxide coating on a surface of the bulk nickel-rich cathode active material, wherein the lithium metal oxide coating exhibits one or more of the following: a greater PF5? score when normalized to that of LiAlO2 at 100%; a greater HF score when normalized to that of LiAlO2 at 100%; or in absolute terms, an enthalpy of reaction value that is less than 0.351.

Abstract: Lithium-ion batteries (LIBs) which include a metal phosphate coating material reactive (scavenging) or stable with cathode materials, HF, LiF, PF5?, and LiOH. The metal phosphates may be applied on the cathode material of LIBs.

Abstract: A method for single side texturing of a crystalline semiconductor substrate (10) comprises: providing a substrate (10), for example a semiconductor substrate, comprising a first surface (12) and a second surface (14) opposite to one another with respect to the substrate (10); providing a masking layer (21) with a random pattern on the first surface (12) of the substrate (10); and etching the substrate (10) in a polishing solution, thereby texturing the first surface (12) of the substrate (10) and polishing the second surface (14) in a single wet etching step.

Abstract: A method for single side texturing of a crystalline semiconductor substrate (10) comprises: providing a substrate (10), for example a semiconductor substrate, comprising a first surface (12) and a second surface (14) opposite to one another with respect to the substrate (10); providing a masking layer (21) with a random pattern on the first surface (12) of the substrate (10); and etching the substrate (10) in a polishing solution, thereby texturing the first surface (12) of the substrate (10) and polishing the second surface (14) in a single wet etching step.

Abstract: A method for fabricating a crystalline silicon photovoltaic cell is disclosed. In one aspect, the method includes a) providing a crystalline silicon substrate of a first dopant type, b) performing an implantation, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate, c) after the implantation, depositing a hydrogen containing layer on the front surface of the substrate, and d) after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.