Abstract: An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

Abstract: A method of forming carbon nanotubes on a copper substrate may comprise providing a copper substrate, depositing a titanium metal thin film adhesion layer on the copper substrate, depositing a titanium nitride thin film on the titanium metal thin film, the titanium nitride thin film being between 100 and 200 nanometers in thickness, depositing a catalyst metal on the titanium nitride thin film, the catalyst metal being in the form of discrete particles on the surface of the titanium nitride thin film, and growing carbon nanotubes on the discrete particles of catalyst metal, the carbon nanotubes being grown to an average length of at least 3 microns, wherein the titanium nitride thin film is a diffusion barrier layer preventing alloying of copper with the catalyst metal. To form a silicon battery electrode, the method may further include depositing silicon on the carbon nanotubes over their entire length.

Abstract: Apparatus for supporting the wires in a hot wire chemical vapor deposition (HWCVD) system are provided herein. In some embodiments, a terminal connector for a hot wire chemical vapor deposition (HWCVD) system may include a base; a wire clamp moveably disposed with relation to the base along an axis; a reflector shield extending from the wire clamp in a first direction along the axis; and a tensioner coupled to the base and wire clamp to bias the wire clamp in a second direction opposite the first direction.

Abstract: An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

Abstract: Apparatus for supporting the wires in a hot wire chemical vapor deposition (HWCVD) system are provided herein. In some embodiments, a terminal connector for a hot wire chemical vapor deposition (HWCVD) system may include a base; a wire clamp moveably disposed with relation to the base along an axis; a reflector shield extending from the wire clamp in a first direction along the axis; and a tensioner coupled to the base and wire clamp to bias the wire clamp in a second direction opposite the first direction.

Abstract: This invention provides a high volume manufacturing compatible process tool and method for integrating deposition of carbon nanotubes into device fabrication. A linear process tool for growing carbon nanotubes comprises a linear conveyor for moving a substrate through the linear process tool and a micro-plasma process unit including a plurality of micro-plasma spray guns arranged in an array, the micro-plasma process unit being positioned above the linear conveyor and configured to deposit material on the surface of the substrate as the substrate passes under the micro-plasma process unit on the linear conveyor. The micro-plasma process unit may include a first array of micro-plasma spray guns for depositing a catalyst material and a second array of micro-plasma spray guns for depositing the carbon nanotubes.