Abstract: A method and a device for maintaining logic state stored in a storage device are described. For one embodiment, the device precharges at least two complimentary nodes in a storage device during the precharge cycle. During the evaluation cycle, the device receives an input data. After receipt of the input data, device stores at least one logic state at a storage node according to the input data. The device includes at least one conducting path to limit one store per each evaluation stage.

Abstract: A circuit for transferring a logic value from a content addressable memory (CAM) having a plurality of match lines to a random access memory (RAM) having a plurality of word lines. A first logic gate has an input coupled to a first match line of the plurality of match lines, and a second logic gate has an input coupled to a second match line of the plurality of match lines. A first switch is coupled between an output of the first logic gate and a first word line, and a second switch is coupled between an output of the second logic gate and a second word line. The first switch is controlled by the output of the second logic gate such that the first switch is opened when the second match line has a second logic value and closed when the second match line has a first logic value. The second switch is controlled by the output of the first logic gate such that the second switch is opened when the first match line has the second logic value and closed when the first match line has the first logic value.

Abstract: A circuit for transferring a logic value from a content addressable memory (CAM) having a plurality of match lines to a random access memory (RAM) having a plurality of word lines. A first logic gate has an input coupled to a first match line of the plurality of match lines, and a second logic gate has an input coupled to a second match line of the plurality of match lines. A first switch is coupled between an output of the first logic gate and a first word line, and a second switch is coupled between an output of the second logic gate and a second word line. The first switch is controlled by the output of the second logic gate such that the first switch is opened when the second match line has a second logic value and closed when the second match line has a first logic value. The second switch is controlled by the output of the first logic gate such that the second switch is opened when the first match line has the second logic value and closed when the first match line has the first logic value.

Abstract: A memory cell comprising a storage cell and a comparison circuit. The storage cell has a second node and a third node. The comparison circuit is coupled to the storage cell and comprises a first plurality of transistors coupled in series to a first input and a second plurality of transistors coupled in series to a second input and coupled to the first plurality of transistors by a first node and by a source voltage node. A match line coupled to the first node indicates a miss when values on the first and second inputs are different than values stored in the storage cell.

Abstract: An interleaved data cache array which is divided into two subarrays is provided for utilization within a data processing system. Each subarray includes a plurality of cache lines wherein each cache line includes a selected block of data, a parity field, a content addressable field containing a portion of an effective address for the selected block of data, a second content addressable field contains a portion of the real address for the selected block of data and a data status field. A separate effective address port and real address port permit parallel access to the cache without conflict in separate subarrays and a subarray arbitration logic circuit is provided for attempted simultaneous access of a single subarray by both the effective address port and the real address port.

Abstract: A sense amplifier (10) has a pair of cross-coupled latches (12, 14, 16, 18) connected between a first voltage supply (V.sub.DD) and the sources of two transistors (20, 22). The gates of the two transistors receive a voltage differential to be sensed. The drains of the two transistors are coupled to a second voltage supply (V.sub.SS) through an enabling transistor (24). The resulting sense amplifier is fast, small, and relatively simple to construct.