Abstract: The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

Abstract: An apparatus includes an integrated waveguide structure, and a first light source operable to produce a probe beam having a first wavelength, wherein the probe beam is coupled into a first end of the waveguide structure. A second light source is operable to produce an excitation beam with having a second wavelength to excite gas molecules in close proximity to a path of the probe beam. A light detector is coupled to a second end of the integrated waveguide structure and is operable to detect the probe beam after it passes through the waveguide structure. The apparatus is operable such that excitation of the gas molecules results in a temperature increase of the gas molecules that induces a change in the probe beam that is measurable by the light detector.

Abstract: A dielectric layer is arranged on a main surface of a semiconductor substrate, a metal layer providing a contact area is embedded in the dielectric layer, a top metal is arranged on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, which comprises a plurality of metallizations arranged in a plurality of via holes, connects the contact area with the top metal. The plurality of metallizations is surrounded by an insulating layer penetrating the substrate.

Abstract: A humidity sensor system (10) includes a monolithically integrated semiconductor device (12). The monolithically integrated semiconductor device (12) includes an optical waveguide (14), a thermo-electric cooling device (16), a temperature measurement probe (18), and control circuitry (26) operable to cause the thermo-electric cooling device (16) to adjust a temperature of the monolithically integrated semiconductor device (12). The optical waveguide (14) is operable to receive an input optical signal from a light source (20) and to provide an output optical signal for sensing by a light detector (22). The humidity sensor system (10) further includes processing circuitry operable to receive output signals from the light detector (22) and from the temperature measurement probe (18) and operable to determine a relative humidity based on the output signals from the light detector (22) and the temperature measurement probe (18).

Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e?, h+ generated by radiation that is incident from a rear side opposite the photodetectors.

Abstract: A dielectric layer is arranged on a main surface of a semiconductor substrate, a metal layer providing a contact area is embedded in the dielectric layer, a top metal is arranged on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, which comprises a plurality of metallizations arranged in a plurality of via holes, connects the contact area with the top metal. The plurality of metallizations is surrounded by an insulating layer penetrating the substrate.

Abstract: The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

Abstract: The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e?, h+ generated by radiation that is incident from a rear side opposite the photodetectors.

Abstract: A transistor in which the electric field is reduced in critical areas using field plates, permitting the electric field to be more uniformly distributed along the component, is provided, wherein the electric field in the active region is smoothed and field peaks are reduced. The semiconductor component has a substrate with an active layer structure, a source contact and a drain contact located on said active layer structure. The source contact and the drain contact are mutually spaced and at least one part of a gate contact is provided on the active layer structure in the region between the source contact and the drain contact, a gate field plate being electrically connected to the gate contact. In addition, at least two separate field plates are placed directly on the active layer structure or directly on a passivation layer.

Abstract: The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump.

Abstract: The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump.

Abstract: The invention relates to a transistor, in which the electric field is reduced in critical areas using field plates, thus permitting the electric field to be more uniformly distributed along the component. The aim of the invention is to provide a transistor and a production method therefor, wherein the electric field in the active region is smoothed (and field peaks are reduced), thus allowing the component to be made more simply and cost-effectively. The semiconductor component according to the invention has a substrate (20) which is provided with an active layer structure, a source contact (30) and a drain contact (28) being located on said active layer structure (24, 26). The source contact (30) and the drain contact (28) are mutually spaced and at least one part of a gate contact (32) is provided on the active layer structure (24, 26) in the region between the source contact (30) and the drain contact (28), a gate field plate (34) being electrically connected to the gate contact (32).

Abstract: An improved method for providing high-quality optical fiber metallization with the required length at the required location. The method enables metallized optical fibers to be soldered and connected to mechanical components while reducing the level of stress in the metal coatings and providing strong adhesion, good conductivity and connectivity. The advantage of the method is a combination of vacuum evaporation and electroless deposition for the optical fiber metallization. A strong adhesion of the metal layer is achieved by the use of an evaporated thin metal layer, comprising an adhesion layer and a seed layer. The stress reduction is achieved due to electroless deposition, which is adequately thick for subsequent soldering/welding or other applications. The method comprises preparation for evaporation, preparation of optical fibers, evaporation of the thin metal adhesion and seed layer on the optical fiber, electroless deposition of an adequately thick metal layer, and acceptance testing.

Abstract: An improved method for providing high-quality optical fiber metallization with the required length at the required location. The method enables metallized optical fibers to be soldered and connected to mechanical components while reducing the level of stress in the metal coatings and providing strong adhesion, good conductivity and connectivity. The advantage of the method is a combination of vacuum evaporation and electroless deposition for the optical fiber metallization. A strong adhesion of the metal layer is achieved by the use of an evaporated thin metal layer, comprising an adhesion layer and a seed layer. The stress reduction is achieved due to electroless deposition, which is adequately thick for subsequent soldering/welding or other applications The method comprises preparation for evaporation, preparation of optical fibers, evaporation of the thin metal adhesion and seed layer on the optical fiber, electroless deposition of an adequately thick metal layer, and acceptance testing.