Abstract: Deterministically doped field-effect devices and methods of making same. One or more dopant atoms, also referred to as impurities or impurity atoms, are arranged in the channel region of a device in engineered arrays. Component atoms of an engineered array are substantially fixed by controlled placement in order to provide a barrier topology designed to control of source-drain carrier flow to realize an ultra-small device with appropriate, consistent performance characteristics. Devices can be made by placing atoms using proximity probe manipulation, ion implantation, by facilitating self-assembly of the atoms as necessary, or other techniques. These atomic placement techniques are combined in example embodiments with traditional methods of forming a substrate, insulators, gates, and any other structural elements needed in order to produce practical field-effect devices.

Abstract: Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells are created. Each bipolar cell can function as a bistable device or an oscillator, depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate and contact electrodes.

Abstract: Deterministically doped field-effect devices and methods of making same. One or more dopant atoms, also referred to as impurities or impurity atoms, are arranged in the channel region of a device in engineered arrays. Component atoms of an engineered array are substantially fixed by controlled placement in order to provide a barrier topology designed to control of source-drain carrier flow to realize an ultra-small device with appropriate, consistent performance characteristics. Devices can be made by placing atoms using proximity probe manipulation, ion implantation, by facilitating self-assembly of the atoms as necessary, or other techniques. These atomic placement techniques are combined in example embodiments with traditional methods of forming a substrate, insulators, gates, and any other structural elements needed in order to produce practical field-effect devices.

Abstract: Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells are created. Each bipolar cell can function as a bistable device or an oscillator, depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate and contact electrodes.