Abstract: A governing circuit for a magneto-transistor is disclosed. The magneto-transistor comprising a first and second collector. At least one emitter and at least one base. The governing circuit is configured to measure a first calibration current at the first collector of the magneto-transistor and a second calibration current at the second collector of the magneto-transistor, while a calibration base-emitter voltage is applied to the magneto-transistor. The magneto-transistor is also configured to measure a first measurement current at the first collector of the magneto-transistor and a second measurement current at the second collector of the magneto-transistor, while a measurement base-emitter voltage is applied to the magneto-transistor, wherein the measurement base-emitter voltage is different form the calibration base-emitter voltage and determine an output signal indicative of an applied magnetic field using the measured first and second measurement current and first and second calibration currents.

Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).

Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract: Apparatus and method for IR-drop and supply noise measurements in electronic circuits. A first voltage at a point of interest in the circuit is sampled and stored during a quiescent mode of the circuit the voltage is to be measured in. Subsequently, the circuit is brought in an operating mode and a second voltage is sampled and held at the same point of interest. The first and the second voltage are compared and a corresponding voltage signal is passed to a system output.

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract: A magnetoresistive angular sensing method is disclosed. In a first mode, a first dc external magnetic field in a predetermined direction is applied to an angular sensor arrangement in which the external magnetic field dominates over a magnetic field generated by an input device an angular position of which is to be sensed. In a second mode, a second external magnetic field is applied to the angular sensor. Outputs of the angular sensor arrangement in the two modes are processed to determine an angular orientation of the input device with offset voltage compensation.

Abstract: A sensor circuit is configured and operated in the presence of interference. In connection with various example embodiments, a stray magnetic field is sensed with current sensors that also respectively sense current-induced magnetic fields generated by current flowing in opposing directions through different portions of a conductor. The current-induced magnetic fields and the stray magnetic field are coplanar, and the current sensors are arranged such that a portion of the output from each current sensor corresponding to the stray magnetic field is canceled when the sensor outputs are combined.

Abstract: The invention relates to an integrated circuit comprising a substrate having a first side and a second opposing side. An electronic circuit (EC) is provided at the first side (S1) of the substrate, wherein the electronic circuit (EC) comprises at least one magnetic field sensor (Snsr, Snsr1, Snsr2, Snsr3, Snsr4). The integrated circuit further comprises a magnetizable region (MR) provided on the second side (S1) of the substrate (SUB) by using a wafer-level type deposition processing step. The magnetic moment of the magnetizable region (MR) is configurable for generating a magnetic field (H1, H2) detectable at the location of the at least one magnetic field sensor (Snsr, Snsr1, Snsr2, Snsr3, Snsr4). The integrated circuit constitutes a very simple construction and enables a strongly miniaturized solution which is, because of its reduced dimensions well suitable for being used in bank cards. An attempt to remove the integrated circuit according to the invention from its environment (e.g.

Abstract: A current sensor, comprises an input conductor (IN) which is supplied with the current to be sensed and an output conductor (OUT) from which the current to be sensed is output. A conductor path is provided between the input conductor and the output conductor, wherein the path is provided on a first, movable element (1) and a second, fixed element (2). The path defines a pair of adjacent path portions (3,5; 3;4), one of the path portions (4;5) on the fixed element and the other (3) on one side of the movable element. An arrangement detects movement of the movable element to determine the current flowing. This arrangement uses a conductor path which can be part of the circuit being tested, and thereby does not require any additional components, other than the movement detector.

Abstract: A field-effect magnetic sensor facilitates highly-sensitive magnetic field detection. In accordance with one or more example embodiments, current flow respectively between first and second source/drain terminals and a third source/drain terminal is controlled using inversion layers in separate channel regions for each of the first and second terminals. In response to a magnetic field, a greater amount of current is passed between the third source/drain terminal and one of the first and second source/drain terminals, relative to an amount of current passed between the third source/drain terminal and the other one of the first and second source/drain terminals.

Abstract: A magnetoresistive angular sensor and sensing method, in which an external magnetic field generator is used to provide a first mode in which a dc external magnetic field is provided in a predetermined direction and which dominates over the magnetic field generated by the input device being sensed. In a second mode, the external magnetic field is smaller. The angular sensor arrangement outputs from the two modes are combined, and this enables the input device angular orientation to be determined with offset voltage compensation.

Abstract: A magnetoresistive angular sensing method is disclosed. In a first mode, a first dc external magnetic field in a predetermined direction is applied to an angular sensor arrangement in which the external magnetic field dominates over a magnetic field generated by an input device an angular position of which is to be sensed. In a second mode, a second external magnetic field is applied to the angular sensor. Outputs of the angular sensor arrangement in the two modes are processed to determine an angular orientation of the input device with offset voltage compensation.

Abstract: A governing circuit for a magneto-transistor is disclosed. The magneto-transistor comprising a first and second collector. At least one emitter and at least one base. The governing circuit is configured to measure a first calibration current at the first collector of the magneto-transistor and a second calibration current at the second collector of the magneto-transistor, while a calibration base-emitter voltage is applied to the magneto-transistor. The magneto-transistor is also configured to measure a first measurement current at the first collector of the magneto-transistor and a second measurement current at the second collector of the magneto-transistor, while a measurement base-emitter voltage is applied to the magneto-transistor, wherein the measurement base-emitter voltage is different form the calibration base-emitter voltage and determine an output signal indicative of an applied magnetic field using the measured first and second measurement current and first and second calibration currents.

Abstract: A field-effect magnetic sensor facilitates highly-sensitive magnetic field detection. In accordance with one or more example embodiments, current flow respectively between first and second source/drain terminals and a third source/drain terminal is controlled using inversion layers in separate channel regions for each of the first and second terminals. In response to a magnetic field, a greater amount of current is passed between the third source/drain terminal and one of the first and second source/drain terminals, relative to an amount of current passed between the third source/drain terminal and the other one of the first and second source/drain terminals.

Abstract: A sensor circuit is configured and operated in the presence of interference. In connection with various example embodiments, a stray magnetic field is sensed with current sensors that also respectively sense current-induced magnetic fields generated by current flowing in opposing directions through different portions of a conductor. The current-induced magnetic fields and the stray magnetic field are coplanar, and the current sensors are arranged such that a portion of the output from each current sensor corresponding to the stray magnetic field is canceled when the sensor outputs are combined.

Abstract: A sensor (400) for sensing jitter in a clock signal has a DLL (402, 310, 312) for locking a clock signal and a delayed version of the clock signal. The sensor comprises a delay line (402) having a first number of cascaded controllable delay segments. The DLL uses a second number of the cascaded delay segments for generating a delay of an average clock period of the clock signal. The second number is smaller than the first number. The sensor also has a comparator (408) for supplying a sensor output signal representative of a comparison of the clock signal and a further delayed version of the clock signal. The further delayed version of the clock signal is obtained from an output of a specific one of the delay segments located in the delay line after the second number of cascaded delay segments.

Abstract: Apparatus and method for IR-drop and supply noise measurements electronic circuits. A first voltage at a point of interest in the circuit is sampled and stored during a quiescent mode of the circuit the voltage is to be measured in. Subsequently, the circuit is brought in an operating mode and a second voltage is sampled and held at the same point of interest. The first and the second voltage are compared and a corresponding voltage signal is passed to a system output.

Abstract: A voltage reference circuit and method for generating a reference voltage using the circuit uses a comparison of the voltages on first and second nodes of a diode resistor network to produce a comparison signal, which is then used to increase the voltage on an output of a charge pump to generate the reference voltage.

Abstract: A current sensor, comprises an input conductor (IN) which is supplied with the current to be sensed and an output conductor (OUT) from which the current to be sensed is output. A conductor path is provided between the input conductor and the output conductor, wherein the path is provided on a first, movable element (1) and a second, fixed element (2). The path defines a pair of adjacent path portions (3,5; 3;4), one of the path portions (4;5) on the fixed element and the other (3) on one side of the movable element. An arrangement detects movement of the movable element to determine the current flowing. This arrangement uses a conductor path which can be part of the circuit being tested, and thereby does not require any additional components, other than the movement detector.