Abstract: Imaging methods, apparatus and systems are provided for using different irradiation frequencies to generate a composite three-dimensional image. One exemplary method for imaging a semiconductor device involves irradiating the semiconductor device with a first frequency of electromagnetic radiation, obtaining a first radiation response from the semiconductor device in response to the first frequency of electromagnetic radiation, irradiating the semiconductor device with a second frequency of electromagnetic radiation, obtaining a second radiation response from the semiconductor device in response to the second frequency of electromagnetic radiation, and generating a composite image of the semiconductor device based at least in part on the first radiation response and the second radiation response.

Abstract: Imaging methods, apparatus and systems are provided for using different irradiation frequencies to generate a composite three-dimensional image. One exemplary method for imaging a semiconductor device involves irradiating the semiconductor device with a first frequency of electromagnetic radiation, obtaining a first radiation response from the semiconductor device in response to the first frequency of electromagnetic radiation, irradiating the semiconductor device with a second frequency of electromagnetic radiation, obtaining a second radiation response from the semiconductor device in response to the second frequency of electromagnetic radiation, and generating a composite image of the semiconductor device based at least in part on the first radiation response and the second radiation response.

Abstract: Methods and apparatus for inspecting a sample are provided. In one aspect, a method of inspection is provided that includes generating an entangled set of particle beams and directing one of the entangled set of particle beams to a location of a workpiece. One of the entangled set of particle beams interacts with the location of the workpiece. One of the entangled set of particle beams is observed after the interaction with the location of the workpiece to inspect the location of the workpiece.

Abstract: A semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure. Consistent with one embodiment of the invention, the semiconductor structure comprises a substrate having a first surface, on which a circuit interconnect layer is formed, and a second surface. A protective layer is formed on the second surface of the substrate, wherein the protective layer is non-reactive with gas used to etch the substrate. An electrically conductive probe extends from the protective layer through the substrate to an active region which is disposed in the substrate.

Abstract: A method for etching a flip chip using secondary particle emissions to detect the etch end-point. The method comprises supplying a voltage level to the device and directing an ion beam at a selected area of the back side of the device in the presence of a gas that is reactive with the substrate. While etching, the quantity of secondary particles emitted from the selected area of the device is monitored. When the quantity of emitted secondary particles reaches a predetermined level, the ion beam is stopped and the reactive gas is removed.

Abstract: Emission microscopy software for analyzing an integrated circuit includes one or more subroutines for determining the location of an emission site based upon a powered down background image and a powered up integrated circuit image; one or more subroutines for controlling an optical dispersing apparatus and a CCD camera shutter set on the emission site to obtain photon counts therein; one or more subroutines for correcting data obtained based upon equipment sensitivities; and one or more subroutines for manipulating data relating to light intensity, wavelength, and energy, as well as relating to voltages applied to the integrated circuit.