Abstract: Example embodiments relate to interconnect structures and related methods. One embodiment includes an interconnect structure. The interconnect structure includes a first interconnection level including a first dielectric layer and a first set of conductive paths. The interconnect structure also includes a second interconnection level arranged above the first interconnection level and including a second dielectric layer and a second set of conductive paths. Further, the interconnect structure includes a third interconnection level arranged above the second interconnection level and including a third dielectric layer and a third set of conductive paths. In addition, the interconnect structure includes a fourth interconnection level arranged above the third interconnection level and including a fourth dielectric layer and a fourth set of conductive paths. Still further, the interconnect structure includes a first multi-level via structure and a second multi-level via structure.

Abstract: Example embodiments relate to interconnect structures and related methods. One embodiment includes an interconnect structure. The interconnect structure includes a first interconnection level including a first dielectric layer and a first set of conductive paths. The interconnect structure also includes a second interconnection level arranged above the first interconnection level and including a second dielectric layer and a second set of conductive paths. Further, the interconnect structure includes a third interconnection level arranged above the second interconnection level and including a third dielectric layer and a third set of conductive paths. In addition, the interconnect structure includes a fourth interconnection level arranged above the third interconnection level and including a fourth dielectric layer and a fourth set of conductive paths. Still further, the interconnect structure includes a first multi-level via structure and a second multi-level via structure.

Abstract: A structure for arresting the propagation of cracks during the dicing of a semiconductor wafer into individual chips includes a monolithic metallic plate that traverses multiple dielectric layers peripheral to an active region of a chip. One or more metallic plates may be formed using lithography and electroplating techniques between the active device region and a peripheral kerf region, where each metallic plate includes a concave feature that faces the kerf region of the wafer.

Abstract: A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.

Abstract: A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.