Abstract: Methods and apparatus for determining the extent of etching in material by locating a detector element adjacent to a portion of the material that is to be etched. The width of the element varies. The resistance of the element is measured upon etching the portion.

Abstract: A method of forming a slotted substrate that includes patterning a thin film over a substrate so that at least a portion of the substrate within a slot region is not covered by the thin film. In addition, a slot is formed in the substrate through the slot region that extends through the substrate and the thin film, wherein a chip count in a shelf surrounding the slot is minimized when the slot is formed in the substrate through the thin film in the slot region.

Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Abstract: Methods and apparatus for determining the extent of etching in material by locating a detector element adjacent to a portion of the material that is to be etched. The width of the element varies. The resistance of the element is measured upon etching the portion.

Abstract: Methods and apparatus for determining the extent of etching in material by locating a detector element adjacent to a portion of the material that is to be etched. The width of the element varies. The resistance of the element is measured upon etching the portion.

Abstract: The present invention includes as one embodiment a method of ejecting a fluid onto a print media. The method includes providing an ejection head having a nozzle that is coupled to a temperature sensor and a memory device. The method further includes measuring an uncalibrated temperature of the ejection head with the temperature sensor, recalling a correction value from the memory device, applying the correction value to the uncalibrated temperature to generate a calibrated temperature, and ejecting fluid from the nozzle onto the print media when the calibrated temperature is within a predefined temperature range.

Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Abstract: The present invention includes as one embodiment a method for fabricating a portion of an ink-jet printhead made of a silicon substrate, the method including selectively etching active region contact vias of a field effect transistor that has a conducting channel that is insulated from a gate terminal by a layer of oxide along with separate substrate contact vias using a single mask and forming the substrate contact vias simultaneously with the active region contact vias during the selective etching.

Abstract: A method of forming a slotted substrate that includes patterning a thin film over a substrate so that at least a portion of the substrate within a slot region is not covered by the thin film. In addition, a slot is formed in the substrate through the slot region that extends through the substrate and the thin film, wherein a chip count in a shelf surrounding the slot is minimized when the slot is formed in the substrate through the thin film in the slot region.

Abstract: A coated substrate for a center feed printhead has a substrate, a thin film applied over the substrate, and a slot region extending through the substrate and the thin film. A slot is formed through the slot region of the coated substrate. The thin film layer coating minimizes crack formation and/or a chip count in a shelf surrounding the slot through the substrate. In one embodiment, the slot is formed mechanically. In one embodiment, a plurality of thin films is used. The slot region extends through the plurality of thin films. Any combination of thin films may be applied over the substrate. In one embodiment, the thin film is at least one of a metal film, a polymer film, and a dielectric film. In another embodiment, the thin film material is ductile and/or deposited under compression. In one embodiment, the substrate is silicon, and the thin film is an insulating layer grown from the substrate, such as field oxide. In one embodiment, the thin film is PSG.

Abstract: A device includes a substrate and a first layer disposed adjacent the substrate. A second layer is disposed adjacent the first layer. A third layer contains a gap and is disposed adjacent the second layer. A fuse is electrically coupled to the third layer and is located in the proximity of the gap in the third layer.

Abstract: A device includes a substrate and a first layer disposed adjacent the substrate. A second layer is disposed adjacent the first layer. A third layer contains a gap and is disposed adjacent the second layer. A fuse is electrically coupled to the third layer and is located in the proximity of the gap in the third layer.

Abstract: Methods and apparatus for determining the extent of etching in material by locating a detector element adjacent to a portion of the material that is to be etched. The width of the element varies. The resistance of the element is measured upon etching the portion.

Abstract: A coated substrate for a center feed printhead has a substrate, a thin film applied over the substrate, and a slot region extending through the substrate and the thin film. A slot is formed through the slot region of the coated substrate. The thin film layer coating minimizes crack formation and/or a chip count in a shelf surrounding the slot through the substrate. In one embodiment, the slot is formed mechanically. In one embodiment, a plurality of thin films is used. The slot region extends through the plurality of thin films. Any combination of thin films may be applied over the substrate.

Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Abstract: A coated substrate for a center feed printhead has a substrate, a thin film applied over the substrate, and a slot region extending through the substrate and the thin film. A slot is formed through the slot region of the coated substrate. The thin film layer coating minimizes crack formation and/or a chip count in a shelf surrounding the slot through the substrate. In one embodiment, the slot is formed mechanically. In one embodiment, a plurality of thin films is used. The slot region extends through the plurality of thin films. Any combination of thin films may be applied over the substrate. In one embodiment, the thin film is at least one of a metal film, a polymer film, and a dielectric film. In another embodiment, the thin film material is ductile and/or deposited under compression. In one embodiment, the substrate is silicon, and the thin film is an insulating layer grown from the substrate, such as field oxide. In one embodiment, the thin film is PSG.

Abstract: A silicon wafer substrate is used in ink-jet printhead fabrication. The fabrication process is improved by simultaneously forming MOSFET source/drain contact vias simultaneously with substrate contact vias. A dry etch having a silicon oxide:silicon etch rate of at least 10:1 is employed.

Abstract: An ink-jet printhead fabrication process and product that uses selectivity rate controlled etch techniques to produce trenches on the frontside of a silicon substrate to define ink feed channels and resistor support regions. Location and size of features is made independent of etch rate by providing a selective etch for the silicon trench etch steps that is greater than 10,000:1 for the silicon:oxide that defines ink feed channels and resistor support areas.

Abstract: An ink-jet printhead fabrication process and product that uses selectivity rate controlled etch techniques to produce trenches on the frontside of a silicon substrate to define ink feed channels and resistor support regions. Location and size of features is made independent of etch rate by providing a selective etch for the silicon trench etch steps that is greater than 10,000:1 for the silicon:oxide that defines ink feed channels and resistor support areas.

Abstract: A coated substrate for a center feed printhead has a substrate, a thin film applied over the substrate, and a slot region extending through the substrate and the thin film. A slot is formed through the slot region of the coated substrate. The thin film layer coating minimizes crack formation and/or a chip count in a shelf surrounding the slot through the substrate. In one embodiment, the slot is formed mechanically. In one embodiment, a plurality of thin films is used. The slot region extends through the plurality of thin films. Any combination of thin films may be applied over the substrate.