Abstract: A solar cell device having a solid state light absorber region that incorporates a donor-acceptor particle structure. The particle structure includes acceptor particles that generate a flow of electrons in the solid state light absorber region in response to absorbed photons; and donor particles comprising a phosphorescent material, wherein each donor particle is coupled to a group of acceptor particles, and wherein the phosphorescent material absorbs high energy photons and emits lower energy photons that are absorbed by the acceptor particles.

Abstract: A solar cell device having a solid state light absorber region that incorporates a donor-acceptor particle structure. The particle structure includes acceptor particles that generate a flow of electrons in the solid state light absorber region in response to absorbed photons; and donor particles comprising a phosphorescent material, wherein each donor particle is coupled to a group of acceptor particles, and wherein the phosphorescent material absorbs high energy photons and emits lower energy photons that are absorbed by the acceptor particles.

Abstract: A solar cell device having a solid state light absorber region that incorporates a donor-acceptor particle structure. The particle structure includes acceptor particles that generate a flow of electrons in the solid state light absorber region in response to absorbed photons; and donor particles comprising a phosphorescent material, wherein each donor particle is coupled to a group of acceptor particles, and wherein the phosphorescent material absorbs high energy photons and emits lower energy photons that are absorbed by the acceptor particles.

Abstract: A solar cell device having a solid state light absorber region that incorporates a donor-acceptor particle structure. The particle structure includes acceptor particles that generate a flow of electrons in the solid state light absorber region in response to absorbed photons; and donor particles comprising a phosphorescent material, wherein each donor particle is coupled to a group of acceptor particles, and wherein the phosphorescent material absorbs high energy photons and emits lower energy photons that are absorbed by the acceptor particles.

Abstract: A solar cell device having a solid state light absorber region that incorporates a donor-acceptor particle structure. The particle structure includes acceptor particles that generate a flow of electrons in the solid state light absorber region in response to absorbed photons; and donor particles comprising a phosphorescent material, wherein each donor particle is coupled to a group of acceptor particles, and wherein the phosphorescent material absorbs high energy photons and emits lower energy photons that are absorbed by the acceptor particles.

Abstract: A method for preparing a patterned directed self-assembly layer for reducing directed self-assembly pattern defectivity using direct current superpositioning is provided. A substrate having a block copolymer layer overlying a first intermediate layer, said block copolymer layer comprising a first phase-separated polymer defining a first pattern and a second phase-separated polymer defining a second pattern in said block copolymer layer is provided. A first plasma etching process using plasma formed of a first process composition to remove said second phase-separated polymer while leaving behind said first pattern of said first phase-separated polymer is performed. A second plasma etching process to transfer said first pattern into said first intermediate layer using plasma formed of a second process composition is performed.

Abstract: Provided is a method for preparing a patterned directed self-assembly layer, comprising: providing a substrate having a block copolymer layer comprising a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer; and performing an etching process to selectively remove the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the surface of the substrate, the etching process being performed at a substrate temperature less than or equal to about 20 degrees C. The method further comprises providing a substrate holder for supporting the substrate, the substrate holder having a first temperature control element for controlling a first temperature at a central region and second temperature control element at an edge region of the substrate and setting a target value for the first and the second temperature.

Abstract: Provided is a method for preparing a patterned directed self-assembly layer, comprising: providing a substrate having a block copolymer layer comprising a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer; and performing an etching process to selectively remove the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the surface of the substrate, the etching process being performed at a substrate temperature less than or equal to about 20 degrees C. The method further comprises providing a substrate holder for supporting the substrate, the substrate holder having a first temperature control element for controlling a first temperature at a central region and second temperature control element at an edge region of the substrate and setting a target value for the first and the second temperature.

Abstract: A method for preparing a patterned directed self-assembly layer for reducing directed self-assembly pattern defectivity using direct current superpositioning is provided. A substrate having a block copolymer layer overlying a first intermediate layer, said block copolymer layer comprising a first phase-separated polymer defining a first pattern and a second phase-separated polymer defining a second pattern in said block copolymer layer is provided. A first plasma etching process using plasma formed of a first process composition to remove said second phase-separated polymer while leaving behind said first pattern of said first phase-separated polymer is performed. A second plasma etching process to transfer said first pattern into said first intermediate layer using plasma formed of a second process composition is performed.