Abstract: Described herein are systems and methods method for forming semiconductor films. In some embodiment, the methods comprising depositing the source solution containing a solvent and plurality of types of metal ionic species and a second type on a substrate heated to a temperature at or above the boiling point of the solvent. In some embodiments, methods and apparatus for exposing a substrate to a gas are also provided.

Abstract: Described herein are systems and methods method for forming semiconductor films. In some embodiment, the methods comprising depositing the source solution containing a solvent and plurality of types of metal ionic species and a second type on a substrate heated to a temperature at or above the boiling point of the solvent. In some embodiments, methods and apparatus for exposing a substrate to a gas are also provided.

Abstract: A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layers, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.

Abstract: A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.

Abstract: A method of and system for chemical vapor deposition of layers of material on substrates for producing thin film semiconductor devices provides for continuous in-line processing. The method and system are adapted for size and potential speed, and for scaling to further increase the rate of production. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The chemical vapor for deposition at each region covers an area that is substantial for substrates, then, also having a substantial area. The chemical vapor may include an organometallic material, such as diethyl zinc vapor, or dimethyl zinc vapor, as well as a material that provides oxygen, such as water vapor or nitrous oxide gas. It may also include a material that provides a dopant.

Abstract: A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precursor film, and providing suitable material to said precursor film to form the compound film. The source material includes oxide-containing particles including Group IB and IIIA elements. The precursor film includes non-oxide Group IB and IIIA elements. The compound film includes a Group IB-IIIA-VIA compound. The oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the source material. Similarly, non-oxides may constitute greater than about 95 molar percent of the Group IB elements and greater than about 95 molar percent of the Group IIIA elements in the precursor film.

Abstract: A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant.

Abstract: This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Abstract: A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant.

Abstract: A thin film photovoltaic device having first layer of copper indium selenide, a second layer of cadmium sulfide having a thickness less than 2500 angstroms, and a third layer of conducting wide bandgap semiconductor such as zinc oxide. The transparent third layer allows good transmission of blue light to the junction region while fully depleting the junction area to improve device voltage.

Abstract: A process of forming a compound semiconductive material having a plurality of constituent elements comprising electrodepositing a plurality of such constituent elements and subsequently heating the deposits to produce the desired semiconductive material.

Abstract: A method of recovering silicon from an aqueous slurry containing finely divided silicon particles comprising mixing at least one flocculating agent with the slurry, allowing silicon flocs to form and physically separating the silicon flocs from the slurry for re-use of the silicon contained therein.

Abstract: A method for refining silicon to produce a high purity silicon product for re-use in industries which demand high purity silicon starting material, comprising vacuum refining said silicon to remove gaseous CO and SiO followed by mixing with an effective fluxing material of at least one fluoride of alkali metals and/or alkaline earth metals, heating the mixture at a temperature and time sufficient to produce a molten silicon phase and a slag phase, and separating the slag from the silicon for recovery of the silicon for re-use.

Abstract: A method for purifying silicon which employes an electrolytic step using a metal fluoride electrolysis to generate silicon fluoride followed by a chemical reaction step which produces elemental silicon in a highly pure form.