Abstract: Method for aligning converted wave seismic reflection data (PS data) with conventional PP seismic reflection data so that both data types may be used to more accurately image the subsurface for hydrocarbon exploration or field development. Amplitude vs. angle (AVA) or amplitude vs. offset (AVO) attributes of PP and PS seismic data are identified and defined, which attributes are theoretically expected to be in phase and optimize seismic resolution in the data. In one embodiment of the invention, such attributes are calculated (310), then the same horizons are identified in a series of PP attributes and in a series of PS attributes, then the second series is aligned with the first at the horizon locations (316, 320), then a time transfer function is generated and applied to the PS mode data (322), and the aligned joint-mode data are inverted (326) using, for example, AVA attributes.

Abstract: A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may include a performance sensitive logic device and the second device may include a yield sensitive memory device.

Abstract: A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may include a performance sensitive logic device and the second device may include a yield sensitive memory device.

Abstract: Method for aligning converted wave seismic reflection data (PS data) with conventional PP seismic reflection data so that both data types may be used to more accurately image the subsurface for hydrocarbon exploration or field development. Amplitude vs. angle (AVA) or amplitude vs. offset (AVO) attributes of PP and PS seismic data are identified and defined, which attributes are theoretically expected to be in phase and optimize seismic resolution in the data. In one embodiment of the invention, such attributes are calculated (310), then the same horizons are identified in a series of PP attributes and in a series of PS attributes, then the second series is aligned with the first at the horizon locations (316, 320), then a time transfer function is generated and applied to the PS mode data (322), and the aligned joint-mode data are inverted (326) using, for example, AVA attributes.

Abstract: A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may include a performance sensitive logic device and the second device may include a yield sensitive memory device.

Abstract: A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may comprise a performance sensitive logic device and the second device may comprise a yield sensitive memory device.

Abstract: A method of geophysical prospecting using seismic trace attribute analysis for formation characterization. More particularly, a method for selection of seismic traces which most accurately represent the subsurface formation in the area of a seismic survey is disclosed. In one embodiment, inflection-point interval analysis is used to account for effects of local surfaces.

Abstract: A method of geophysical prospecting using seismic trace attribute analysis for formation characterization. More particularly, a method for selection of seismic traces which most accurately represent the subsurface formation in the area of a seismic survey is disclosed. In one embodiment, inflection-point interval analysis is used to account for effects of local surfaces.