Abstract: A freewheel clutch includes a race including circumferentially spaced notches, each including first and second flanks, and a pawl including a leg having relatively radial inner and outer surfaces, side surfaces extending between the radial inner and outer surfaces, a thickness between the radial inner and outer surfaces, and a width between the side surfaces greater than the thickness. The pawl also includes a knuckle at a forward portion of the leg and having a forward end surface engageable with one of the flanks of the notches of the race in a detent position of the pawl with respect to the race, and being configured in cooperation with the notches of the race to restrain the pawl from advancing into the detent position at rotational speeds exceeding a detent-blocking rotational speed of the race relative to the pawl.

Abstract: This invention relates to methodology to resolve the problem of low drain/source breakdown voltage (BVdss) in small geometry devices with thin gate oxide. Improved drain diffusion profile implanting through disjoint NSD/NWELL windows in the extended drain region, This provides essentially an improved lightly diffused (LDD) structure. Further this invention relates to alternative methods to resolve the problem of low drain/source breakdown voltage in other structures which can be achieved by for example, building a number of side wall oxide layers, impurity compensation or oxygen implantation. The improved LDD structure to which this invention relates has a number of advantages when compared with other solutions. It enables high voltage transistors to be fabricated with high drive capability, without additional process steps being required to implement the structure. The inventions will find applications wherever a high voltage capability is required to interface with the outside world.