Abstract: Methods for depositing metal films using a metal halide precursor and diethyl zinc are described. The substrate is exposed to a first metal precursor and diethyl zinc to form the metal film. The exposures can be sequential or simultaneous. The metal films are pure with a low carbon content. The first metal precursor may be a metal halide selected from the group consisting of tantalum chloride, aluminum chloride, niobium chloride, titanium chloride, zirconium chloride, hafnium chloride, tungsten chloride, molybdenum chloride, tantalum bromide, aluminum bromide, niobium bromide titanium bromide, zirconium bromide, hafnium bromide, tungsten bromide, molybdenum bromide, tantalum fluoride, aluminum fluoride, niobium fluoride, titanium fluoride, zirconium fluoride, hafnium fluoride, tungsten fluoride, molybdenum fluoride, tantalum iodide, aluminum iodide, niobium iodide, titanium iodide, zirconium iodide, hafnium iodide, tungsten iodide, and molybdenum iodide.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.