Abstract: A system may generate buyback guarantee options for a particular vehicle, each option based on a user satisfying respective predetermined condition(s). The system may receive a user selection at a future date claiming one of the guarantee options. The system may determine whether the user satisfied the applicable predetermined condition(s), and whether the buyback guarantee price is greater than the current selling price of the vehicle. Responsive to such determinations, the system may provide the user with payment option(s) for receiving the difference between the buyback guarantee price and the vehicle current selling price.

Abstract: One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip.

Abstract: One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip.

Abstract: A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.

Abstract: A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.