Patents by Inventor Vijaya Subramaniam VEMURI

Vijaya Subramaniam VEMURI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flash memory bitcell erase with source bias voltage
    Patent number: 10902921
    Abstract: In some examples, a flash memory comprises a first gate and a second gate located over a semiconductor substrate a third gate located between the first gate and the second gate a floating gate located between the third gate and the semiconductor substrate; and a doped region located within the semiconductor substrate and proximate the second gate, wherein the doped region is configured to receive a positive bias voltage with respect to the semiconductor substrate during an erase cycle.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: January 26, 2021
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Xiang-Zheng Bo, Vijaya Subramaniam Vemuri, Corey Rollin O'Brien
  • FLASH MEMORY BITCELL ERASE WITH SOURCE BIAS VOLTAGE
    Publication number: 20200202946
    Abstract: In some examples, a flash memory comprises a first gate and a second gate located over a semiconductor substrate a third gate located between the first gate and the second gate a floating gate located between the third gate and the semiconductor substrate; and a doped region located within the semiconductor substrate and proximate the second gate, wherein the doped region is configured to receive a positive bias voltage with respect to the semiconductor substrate during an erase cycle.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 25, 2020
    Inventors: Xiang-Zheng BO, Vijaya Subramaniam VEMURI, Corey Rollin O'BRIEN