Abstract: An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.

Abstract: A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.

Abstract: A method for predicting etch rate uniformity for qualifying health status of a processing chamber during substrate processing of substrates is provided. The method includes executing a recipe and receiving processing data from a first set of sensors. The method further includes analyzing the processing data utilizing a subsystem health check predictive model to determine calculated data, which includes at least one of etch rate data and uniformity data. The subsystem health check predictive model is constructed by correlating measurement data from a set of film substrates with processing data collected during analogous processing of a set of non-film substrates. The method yet also includes performing a comparison of the calculated data against a set of control limits as defined by the subsystem health check predictive model. The method yet further includes generating a warning if the calculated data is outside of the set of control limits.

Abstract: A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.

Abstract: A system for facilitating seasoning a plasma processing chamber. The system includes a computer-readable medium storing a chamber seasoning program (or CS program). The CS program includes code for receiving a first plurality of values and a second plurality of values of a set of parameters related to operation of the plasma processing chamber. The CS program includes code for ascertaining, using the first plurality of values and the second plurality of values, whether current values of the parameters have stabilized. The CS program also includes code for determining, using the second plurality of values but not the first plurality of values, whether the current values of parameters have stabilized within a predetermined range. The system may also include circuit hardware for performing one or more tasks associated with the CS program.

Abstract: A method for automatically identifying an optimal endpoint algorithm for qualifying a process endpoint during substrate processing within a plasma processing system is provided. The method includes receiving sensor data from a plurality of sensors during substrate processing of at least one substrate within the plasma processing system, wherein the sensor data includes a plurality of signal streams from a plurality of sensor channels. The method also includes identifying an endpoint domain, wherein the endpoint domain is an approximate period within which the process endpoint is expected to occur. The method further includes analyzing the sensor data to generate a set of potential endpoint signatures. The method yet also includes converting the set of potential endpoint signatures into a set of optimal endpoint algorithms. The method yet further includes importing one optimal endpoint algorithm of the set of optimal endpoint algorithms into production environment.

Abstract: A method for assessing health status of a processing chamber is provided. The method includes executing a recipe. The method also includes receiving processing data from a set of sensors during execution of the recipe. The method further includes analyzing the processing data utilizing a set of multi-variate predictive models. The method yet also includes generating a set of component wear data values. The method yet further includes comparing the set of component wear data values against a set of useful life threshold ranges. The method moreover includes generating a warning if the set of component wear data values is outside of the set of useful life threshold ranges.

Abstract: A process-level troubleshooting architecture (PLTA) configured to facilitate substrate processing in a plasma processing system is provided. The architecture includes a process module controller. The architecture also includes a plurality of sensors, wherein each sensor of the plurality of sensors communicates with the process module controller to collect sensed data about one or more process parameters. The architecture further includes a process-module-level analysis server, wherein the process-module-level analysis server communicates directly with the plurality of sensors and the process module controller. The process-module-level analysis server is configured for receiving data, wherein the data include at least one of the sensed data from the plurality of sensors and process module and chamber data from the process module controller.

Abstract: An arrangement for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra in a plasma chamber is provided. The arrangement includes a flash lamp and a set of quartz windows. The arrangement also includes a plurality of collimated optical assemblies, which is optically coupled to the set of quartz windows. The arrangement further includes a plurality of fiber optic bundles, which comprises at least an illumination fiber optic bundle, a collection fiber optic bundle, and a reference fiber optic bundle. The arrangement more over includes a multi-channel spectrometer, which is configured with at least a signal channel and a reference channel. The signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

Abstract: A method for optical interrogation of plasma during plasma processing in a plasma processing chamber is provided. The method includes providing an optical viewport. The method also includes providing a collimator arrangement. The collimator arrangement is configured with a plurality of collimators, wherein a first collimator of the plurality of collimators is separated by a connecting region from a second collimator in the plurality of collimators. The method further includes collecting optical signals, through the collimator arrangement, from the plasma within the plasma processing chamber while a substrate is being processed, resulting in highly collimated optical signals.

Abstract: A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n?1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.

Abstract: A method of determining a parameter of interest during fabrication of a patterned substrate includes illuminating at least a portion of the patterned substrate with a normal incident light beam, obtaining a measured net reflectance spectrum of the portion of the patterned substrate from a normal reflected light beam, calculating a modeled net reflectance spectrum of the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. The modeled net reflectance spectrum is calculated as a weighted incoherent sum of reflectances from n?1 different regions constituting the portion of the patterned substrate, wherein the reflectance of each of the n different regions is a weighted coherent sum of reflected fields from k?1 laterally-distinct areas constituting the region.

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Abstract: A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n≧1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.

Abstract: An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Abstract: A method of determining a parameter of interest during fabrication of a patterned substrate includes illuminating at least a portion of the patterned substrate with a normal incident light beam, obtaining a measured net reflectance spectrum of the portion of the patterned substrate from a normal reflected light beam, calculating a modeled net reflectance spectrum of the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. The modeled net reflectance spectrum is calculated as a weighted incoherent sum of reflectances from n≧1 different regions constituting the portion of the patterned substrate, wherein the reflectance of each of the n different regions is a weighted coherent sum of reflected fields from k≧1 laterally-distinct areas constituting the region.

Abstract: A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.