Abstract: A method of silanizing the surface of a low-k interlayer dielectric oxides (carbon doped oxides or organo-silicate glasses) to improve surface adhesion to adjacent thin film layers in damascene integration of microelectronic devices. A low-k interlayer dielectric oxide may be exposed to the vapor of a silane-coupling agent in order to modify its surface energy to improve adhesion with adjacent thin film layers. A low-k interlayer dielectric oxide can also be silanized by dipping the low-k interlayer dielectric oxide in a solution of silane-coupling agent. The silane-coupling agent will cause covalent bonds between the low-k interlayer dielectric oxide and the adjacent thin film thereby improving adhesion.

Abstract: A method for modifying an interlayer dielectric (ILD) is disclosed. In one embodiment, an ILD is formed having metallization therein, which may have a protective layer. The ILD is then exposed to a first solution comprising a F− ion, either aqueous with a co-solvent or an organic-HF in conjunction with an organic solvent in supercritical carbon dioxide. After exposing the ILD to the first solution, the ILD is exposed to a second solution comprising a silane in supercritical carbon dioxide. In another embodiment, the ILD is exposed to the first solution after a damascene process including a chemical mechanical polishing is performed on the ILD. In a further embodiment, the ILD can be polymerized to create an organic polymer network after the ILD has been exposed to the second solution.

Abstract: Bidentate chelating ligands may be utilized to remove metal contaminants in semiconductor wafers. Each metal center may have three chelating ligands attached to it. The resulting complex may be removed as a vapor using a dynamic vacuum or a supercritical carbon dioxide, as two examples.

Abstract: Suitable particles may be deposited within an extremely small high-aspect ratio via by flowing the particles in a suspension using supercritical carbon dioxide. The particles may be made up of diblock copolymers or silesquioxane-based materials or oligomers of phobic homopolymers or pre-formed silica-based particles stabilized using diblock copolymers and may include chemical initiators to permit in situ polymerization within the via.

Abstract: A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially porous material that may be later densified. The thin hard mask may be used to prevent etch steps used in forming an unlanded via from reaching layers below the hard mask.

Abstract: Suitable particles may be deposited within an extremely small high-aspect ratio via by flowing the particles in a suspension using supercritical carbon dioxide. The particles may be made up of diblock copolymers or silesquioxane-based materials or oligomers of phobic homopolymers or pre-formed silica-based particles stabilized using diblock copolymers and may include chemical initiators to permit in situ polymerization within the via.

Abstract: Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an oxidizer in one embodiment.

Abstract: Supercritical carbon dioxide may be utilized to clean metal lines (e.g. copper, cobalt). The supercritical carbon dioxide cleans may include hydrogen gas in one embodiment, hydrofluoric acid in another embodiment, and hexafluoroacetyl acetone as a metal-binding ligand in another embodiment.

Abstract: Liquid phase co-solvent(s) may be combined with supercritical carbon dioxide for more effective use of wet chemistries for cleaning and etching applications in semiconductor fabrication technologies. Because of the use of the two-phase system, more effective solvents, for example that may not be completely soluble in supercritical carbon dioxide, may be utilized, and the benefits of both the supercritical carbon dioxide gas-like phase and the liquid co-solvent may be achieved, in some cases. The efficacy of supercritical carbon dioxide cleaning can be enhanced by repetition of the etch/clean steps on the substrate, sometimes in conjunction with intervening rinse steps.

Abstract: Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an ionic liquid in one embodiment.

Abstract: Radiant energy may be applied to a photochemically susceptible etching or conditioning solution to enable precise control of the removal of material or alteration of the top surface of a wafer during the fabrication of semiconductor integrated circuits. A particular condition may be detected during the course of photoactivated generation of free radicals or molecular activation to control the further generation of said species by controlling the radiant energy exposure of a wafer.

Abstract: Supercritical carbon dioxide may be utilized to remove fluorine-based etch residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may have dissolved in it various reagents and fluorocarbon materials that, together, cause the residue to swell and to be exposed for reactions with the reagents, the supercritical carbon dioxide, and the fluorocarbons. As a result, relatively hard to penetrate fluorine-based residues may be entered and removed using aggressive chemistries.

Abstract: A wet etching solution may be utilized to remove insulator material between delicate structures. Surface tension effects of the wet etching solution may tend to collapse or deform delicate features. By applying sonic energy during the wet etch process and/or the removal of the wafer from a wet etching bath, the adverse effects of surface tension may be counteracted.

Abstract: Processing problems associated with porous low-k dielectric materials are often severe. Exposure of low-k materials to plasma during feature etching, ashing, and priming steps has deleterious consequences. For porous, silicon-based low-k dielectric materials, the plasma depletes a surface organic group, raising the dielectric constant of the material. In the worst case, the damaged dielectric is destroyed during the wet etch removal of the antireflective coating in the via-first copper dual-damascene integration scheme. This issue is addressed by exposing the dielectric to silane coupling agents at various stages of etching and cleaning. Chemical reactions with the silane coupling agent both replenish the dielectric surface organic group and passivate the dielectric surface relative to the surface of the antireflective coating.

Abstract: A method of silanizing the surface of a low-k interlayer dielectric oxides (carbon doped oxides or organo-silicate glasses) to improve surface adhesion to adjacent thin film layers in damascene integration of microelectronic devices. A low-k interlayer dielectric oxide may be exposed to the vapor of a silane-coupling agent in order to modify its surface energy to improve adhesion with adjacent thin film layers. A low-k interlayer dielectric oxide can also be silanized by dipping the low-k interlayer dielectric oxide in a solution of silane-coupling agent. The silane-coupling agent will cause covalent bonds between the low-k interlayer dielectric oxide and the adjacent thin film thereby improving adhesion.

Abstract: Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The Supercritical carbon dioxide may include an ionic liquid in one embodiment.

Abstract: A method for controlling etch bias of carbon doped oxide films comprising performing the etch in a cyclic two step process i.e., a carbon doped oxide (CDO) removal process, said CDO removal process comprises a first gas to etch a trench in the CDO layer. The CDO removal process is followed by a polymer deposition process. The polymer deposition process comprises introducing a second gas in the reactor to deposit a polymer in the trench of the CDO layer. The first gas comprises a first molecule having a first ratio of carbon atoms to fluorine atoms, and the second gas comprises a second molecule having a second ratio of carbon atoms to fluorine atoms, such that the second ratio of carbon atoms to fluorine atoms is greater than the first ratio of carbon atoms to fluorine atoms. The above process may be repeated to etch the final structure.