Abstract: A method of modifying a layer of thin film composite material to achieve one or more desired properties for the thin film layer which cannot be achieved by heat treatment at all practical temperatures of operation allowable by particular integrated circuit processes. In particular, the thin film composite material is subjected to an ion implantation process. Depending on the doping species, the doping concentration, the doping energy, and other ion implantation parameters, one or more properties of the deposited thin film resistive layer can be modified. Such properties may include electrical, optical, thermal and physical properties. For instance, the sheet resistance and/or the temperature coefficient of resistance of the thin film composite material may be increased or decreased by appropriately implanting ions into the material. The ion implantation can be applied globally in order to modify one or more properties of the entire deposited thin film composite layer.