Abstract: An integrated circuit is provided that includes an execution engine and a memory controller. The execution engine is clocked at a first rate and the memory controller is clocked at a second rate that is less than the first rate. Pins on the integrated circuit can transfer data to and from the integrated circuit on both the rising and falling edges of a second clock transitioning at the second clock rate. The integrated circuit is preferably packaged using a lead frame and wire bonds extending from pads on the integrated circuit to corresponding leads. The leads are secured to trace conductors on a surface of a printed circuit board. The board contains no more than two conductive layers separated by a dielectric layer.

Abstract: An integrated circuit is provided that includes an execution engine and a memory controller. The execution engine is clocked at a first rate and the memory controller is clocked at a second rate that is less than the first rate. Pins on the integrated circuit can transfer data to and from the integrated circuit on both the rising and falling edges of a second clock transitioning at the second clock rate. The integrated circuit is preferably packaged using a lead frame and wire bonds extending from pads on the integrated circuit to corresponding leads. The leads are secured to trace conductors on a surface of a printed circuit board. The board contains no more than two conductive layers separated by a dielectric layer.

Abstract: A memory controller is provided and a method for transferring data between the memory controller and a memory device. The memory controller can be implemented on an integrated circuit that also contains an execution unit. The execution unit can be clocked at a first clock rate, whereas the memory controller can be selectively clocked at either the first clock rate or a second clock rate that is approximately one-half frequency of the first clock rate. By clocking the memory controller at either the first clock rate or the second clock rate, the memory controller can accommodate different types of semiconductor memory. For example, the memory controller can control single data rate (SDR) DRAM memory if it is clocked at a first clock rate. Conversely, the memory controller can control double data rate (DDR) DRAM memory if it is clocked at approximately one-half the first clock rate.

Abstract: A semiconductor memory device is provided as well as a method for operating the semiconductor memory device. The memory device includes a NOR array of memory cells and a NAND array of memory cells configured on the same monolithic semiconductor substrate. Each cell of the NOR array involves a single transistor, similar to each cell of the NAND array. The memory device is, therefore, an integrated circuit that includes not only the NOR and NAND arrays, but also the row and column decoders corresponding to each array. Furthermore, the integrated circuit includes the interface circuitry needed to transfer information as pages into and from the NAND array. The corresponding interface or controller is implemented on the same monolithic substrate as both the NAND array and the NOR array. Addresses targeted for the NOR array are sent as fully memory-mapped data into the NOR array, whereas addresses targeted for the NAND array are sent through the controller integrated within the semiconductor memory device.

Abstract: This invention describes a method and apparatus for filtering noise from a measurement of the X and Y coordinates of a resistive digitizer. The method applies to both four and five wire resistive digitizers biased with a DC voltage. The same filtering and measurement apparatus can be used on both types of digitizers with inclusion of an extra signal pin to accommodate the sense lead of the five wire digitizer. This approach involves connecting the signal to be read to a filter, reading the filtered voltage, and disconnecting the signal from the filter before disconnecting bias voltage from the planes of the digitizer. A separate filter is used for the X and Y coordinate signals and each filter voltage can be read at any time before the next measurement. A reset voltage is available to an established reference on the filter capacitor when a “pen up” status is detected.