Patents by Inventor Vikram Arvind Patil

Vikram Arvind Patil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Active bandgap tuning of graphene for tunable photodetection applications
    Patent number: 8878120
    Abstract: In a method for adjusting the sensitivity of a photodetector, the bandgap of the photodetection material is adjusted by inducing strain in the photodetection material. Such adjustments can be made in situ and continuously, in a reproducible and repeatable manner. In embodiments of the method, the photodetection material is graphene, carbon nanotubes or graphene nanoribbon. The use of graphene permits a dynamically-adjustable sensitivity over a dynamic range of radiation having wavelengths of 1.38 microns or less, up to at least 60 microns. In an adjustable photodetector, a graphene layer is suspended over a silicon substrate by a layer of an insulating material. Adjusting the voltage across the graphene layer and the silicon substrate induces strain in the graphene layer by electrostatic attraction.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: November 4, 2014
    Assignee: The Trustees of the Stevens Institute of Technology
    Inventors: Vikram Arvind Patil, Eui-Hyeok Yang, Stefan Strauf
  • ACTIVE BANDGAP TUNING OF GRAPHENE FOR TUNABLE PHOTODETECTION APPLICATIONS
    Publication number: 20120153119
    Abstract: In a method for adjusting the sensitivity of a photodetector, the bandgap of the photodetection material is adjusted by inducing strain in the photodetection material. Such adjustments can be made in situ and continuously, in a reproducible and repeatable manner. In embodiments of the method, the photodetection material is graphene, carbon nanotubes or graphene nanoribbon. The use of graphene permits a dynamically-adjustable sensitivity over a dynamic range of radiation having wavelengths of 1.38 microns or less, up to at least 60 microns. In an adjustable photodetector, a graphene layer is suspended over a silicon substrate by a layer of an insulating material. Adjusting the voltage across the graphene layer and the silicon substrate induces strain in the graphene layer by electrostatic attraction.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 21, 2012
    Inventors: Vikram Arvind Patil, Eui-Hyeok Yang, Stefan Strauf