Patents by Inventor Vikram B. Krishnamurthy
Vikram B. Krishnamurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7158383Abstract: A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.Type: GrantFiled: November 18, 2003Date of Patent: January 2, 2007Assignee: General Electric CompanyInventors: Kevin M. Durocher, Richard J. Saia, Vikram B. Krishnamurthy
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Publication number: 20040114336Abstract: A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.Type: ApplicationFiled: November 18, 2003Publication date: June 17, 2004Inventors: Kevin M. Durocher, Richard J. Saia, Vikram B. Krishnamurthy
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Patent number: 6733711Abstract: There is provided a flexible circuit module, including at least one rigid carrier, at least one solid state device mounted over a first side of the at least one rigid carrier, a flexible base supporting a second side of the at least one rigid carrier, a conductive interconnect pattern on the flexible base, and a plurality of feed through electrodes extending from the first side to the second side of the at least one rigid carrier and electrically connecting the conductive interconnect pattern with the at least one of a plurality of the solid state devices. The solid state devices may be LED chips to form an LED array module.Type: GrantFiled: March 14, 2003Date of Patent: May 11, 2004Assignee: General Electric CompanyInventors: Kevin Matthew Durocher, Ernest Wayne Balch, Vikram B. Krishnamurthy, Richard Joseph Saia, Herbert Stanley Cole, Ronald Frank Kolc
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Patent number: 6730533Abstract: There is provided a flexible circuit module, including at least one rigid carrier, at least one solid state device mounted over a first side of the at least one rigid carrier, a flexible base supporting a second side of the at least one rigid carrier, a conductive interconnect pattern on the flexible base, and a plurality of feed through electrodes extending from the first side to the second side of the at least one rigid carrier and electrically connecting the conductive interconnect pattern with the at least one of a plurality of the solid state devices. The solid state devices may be LED chips to form an LED array module.Type: GrantFiled: March 14, 2003Date of Patent: May 4, 2004Assignee: General Electric CompanyInventors: Kevin Matthew Durocher, Ernest Wayne Balch, Vikram B. Krishnamurthy, Richard Joseph Saia, Herbert Stanley Cole, Ronald Frank Kolc
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Publication number: 20040063294Abstract: A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.Type: ApplicationFiled: September 30, 2002Publication date: April 1, 2004Inventors: Kevin M. Durocher, Richard J. Saia, Vikram B. Krishnamurthy
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Patent number: 6709944Abstract: A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.Type: GrantFiled: September 30, 2002Date of Patent: March 23, 2004Assignee: General Electric CompanyInventors: Kevin M. Durocher, Richard J. Saia, Vikram B. Krishnamurthy
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Patent number: 6614103Abstract: There is provided a flexible circuit module, including at least one rigid carrier, at least one solid state device mounted over a first side of the at least one rigid carrier, a flexible base supporting a second side of the at least one rigid carrier, a conductive interconnect pattern on the flexible base, and a plurality of feed through electrodes extending from the first side to the second side of the at least one rigid carrier and electrically connecting the conductive interconnect pattern with the at least one of a plurality of the solid state devices. The solid state devices may be LED chips to form an LED array module.Type: GrantFiled: September 1, 2000Date of Patent: September 2, 2003Assignee: General Electric CompanyInventors: Kevin Matthew Durocher, Ernest Wayne Balch, Vikram B. Krishnamurthy, Richard Joseph Saia, Herbert Stanley Cole, Ronald Frank Kolc
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Publication number: 20030160256Abstract: There is provided a flexible circuit module, including at least one rigid carrier, at least one solid state device mounted over a first side of the at least one rigid carrier, a flexible base supporting a second side of the at least one rigid carrier, a conductive interconnect pattern on the flexible base, and a plurality of feed through electrodes extending from the first side to the second side of the at least one rigid carrier and electrically connecting the conductive interconnect pattern with the at least one of a plurality of the solid state devices. The solid state devices may be LED chips to form an LED array module.Type: ApplicationFiled: March 14, 2003Publication date: August 28, 2003Applicant: General Electric CompanyInventors: Kevin Matthew Durocher, Ernest Wayne Balch, Vikram B. Krishnamurthy, Richard Joseph Saia, Herbert Stanley Cole, Ronald Frank Kolc
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Publication number: 20030153108Abstract: There is provided a flexible circuit module, including at least one rigid carrier, at least one solid state device mounted over a first side of the at least one rigid carrier, a flexible base supporting a second side of the at least one rigid carrier, a conductive interconnect pattern on the flexible base, and a plurality of feed through electrodes extending from the first side to the second side of the at least one rigid carrier and electrically connecting the conductive interconnect pattern with the at least one of a plurality of the solid state devices. The solid state devices may be LED chips to form an LED array module.Type: ApplicationFiled: March 14, 2003Publication date: August 14, 2003Applicant: General Electric CompanyInventors: Kevin Matthew Durocher, Ernest Wayne Balch, Vikram B. Krishnamurthy, Richard Joesph Saia, Herbert Stanley Cole, Ronald Frank Kolc
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Patent number: 5385855Abstract: A depletion mode MOSFET and resistor are fabricated as a silicon carbide (SiC) integrated circuit (IC). The SiC IC includes a first SiC layer doped to a first conductivity type and a second SiC layer overlaid on the first SiC layer and doped to a second conductivity type. The second SiC layer includes at least four more heavily doped regions of the second conductivity type, with two of such regions comprising MOSFET source and drain electrodes and two other of such regions comprising resistor electrodes. The second SiC layer includes an isolation trench between the MOSFET electrodes and the resistor electrodes. At least two electrically conductive contacts are provided as MOSFET electrode contacts, each being positioned over at least a portion of a respective MOSFET electrode and two other electrically conductive contacts are provided as resistor electrode contacts, each being positioned over at least a portion of a respective resistor electrode.Type: GrantFiled: February 24, 1994Date of Patent: January 31, 1995Assignee: General Electric CompanyInventors: Dale M. Brown, Gerald J. Michon, Vikram B. Krishnamurthy, James W. Kretchmer