Patents by Inventor Vikram M. Bholse

Vikram M. Bholse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of improving ion beam quality in an implant system
    Patent number: 10825653
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: November 3, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P. T. Bateman, Timothy J. Miller, Vikram M. Bholse
  • Method Of Improving Ion Beam Quality In an Implant System
    Publication number: 20190027341
    Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.
    Type: Application
    Filed: September 21, 2018
    Publication date: January 24, 2019
    Inventors: John W. Graff, Bon-Woong Koo, John A. Frontiero, Nicholas P.T. Bateman, Timothy J. Miller, Vikram M. Bholse