Abstract: Methods and systems for determining information for a specimen are provided. One system includes a computer subsystem configured for removing one or more patterns in a specimen image that do not touch a defect detected in the specimen image thereby generating a modified specimen image. The computer subsystem is also configured for generating one or more hash codes for the modified specimen image. In addition, the computer subsystem is configured for assigning the specimen image to one of multiple groups based on a distance between the one or more hash codes and one or more other hash codes generated for a second modified specimen image generated for a second specimen image.

Abstract: A system for reducing printable defects on a pattern mask is disclosed. The system includes a controller configured to be communicatively coupled to a characterization sub-system, the controller including one or more processors configured to execute program instructions causing the one or more processors to: direct the characterization sub-system to perform inspection of a mask blank; generate a cost function based on a first characteristic and a second characteristic, the first characteristic comprising areas of defect regions exposed by mask patterns, the second characteristic comprising pattern complexity of a design pattern; determine one or more values indicative of a minimum of the cost function via a non-linear optimization procedure; and generate one or more control signals to adjust rotation and translation of the mask blank relative to the design pattern based on the determined one or more values indicative of the minimum of the cost function.

Abstract: A system for reducing printable defects on a pattern mask is disclosed. The system includes a controller configured to be communicatively coupled to a characterization sub-system, the controller including one or more processors configured to execute program instructions causing the one or more processors to: direct the characterization sub-system to perform inspection of a mask blank; generate a cost function based on a first characteristic and a second characteristic, the first characteristic comprising areas of defect regions exposed by mask patterns, the second characteristic comprising pattern complexity of a design pattern; determine one or more values indicative of a minimum of the cost function via a non-linear optimization procedure; and generate one or more control signals to adjust rotation and translation of the mask blank relative to the design pattern based on the determined one or more values indicative of the minimum of the cost function.

Abstract: Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photomask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.

Abstract: Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photornask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.

Abstract: A technique for calculating a second aerial image associated with a photo-mask that can be used to determine whether or not the photo-mask (which may include defects) is acceptable for use in a photolithographic process is described. In particular, using a first aerial image produced by the photo-mask when illuminated using a source pattern and an inspection image of the photo-mask, a mask pattern corresponding to the photo-mask is determined. For example, the first aerial image may be obtained using an aerial image measurement system, and the inspection image may be a critical-dimension scanning-electron-microscope image of the photo-mask. This image, which has a higher resolution than the first aerial image, may indicate spatial-variations of a magnitude of the transmittance of the photo-mask. Then, the second aerial image may be calculated based on the determined mask pattern using a different source pattern than the source pattern.

Abstract: A technique for calculating a second aerial image associated with a photo-mask that can be used to determine whether or not the photo-mask (which may include defects) is acceptable for use in a photolithographic process is described. In particular, using a first aerial image produced by the photo-mask when illuminated using a source pattern and an inspection image of the photo-mask, a mask pattern corresponding to the photo-mask is determined. For example, the first aerial image may be obtained using an aerial image measurement system, and the inspection image may be a critical-dimension scanning-electron-microscope image of the photo-mask. This image, which has a higher resolution than the first aerial image, may indicate spatial-variations of a magnitude of the transmittance of the photo-mask. Then, the second aerial image may be calculated based on the determined mask pattern using a different source pattern than the source pattern.