Patents by Inventor Vikrant Kumar Chauhan

Vikrant Kumar Chauhan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11036913
    Abstract: A method includes accessing, from a memory, a schematic diagram of a circuit that depicts components of the circuit and, connected to one or more of the components, single-pin imaginary devices associated with group properties of the components. The method further includes automatically generating a design layout for the circuit based on the schematic diagram. The design layout comprises shapes representing the components and, on each shape representing a specific component that is connected to a single-pin imaginary device, a specific group label corresponding to a specific group property of the specific component. Placement of the shapes within the design layout is group label dependent. Accessing of the schematic diagram and the automatically generating of the design layout are performed by a layout generator tool executed by a processor of a computer-aided design system.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: June 15, 2021
    Assignee: Marvell Asia Pte., Ltd.
    Inventors: Heng Lan Lau, Manjunatha Prabhu, Vikrant Kumar Chauhan, Shawn Walsh
  • Patent number: 10579774
    Abstract: In the disclosed design systems and methods, a schematic diagram includes nets and, connected to at least some nets, single-pin first and second imaginary devices. On any given net, a first imaginary device is associated with a tracking group property of the net (where nets in the same tracking group are in-phase) and a second imaginary device is associated with a voltage property of the net. A design layout generated based on the schematic diagram includes: net shapes representing the nets and, on net shapes that represent nets connected to the imaginary devices, tracking group and voltage labels corresponding to the tracking group and voltage properties. Net shape placement within the design layout and design rule checking are performed according to design rules that dictate placing net shapes with the same tracking group label together and further dictate minimum allowable spacing requirements depending upon the tracking group and voltage labels.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: March 3, 2020
    Assignee: Marvell International Ltd.
    Inventors: Heng Lan Lau, Manjunatha Prabhu, Vikrant Kumar Chauhan, Shawn Walsh
  • Publication number: 20190384885
    Abstract: In the disclosed design systems and methods, a schematic diagram includes nets and, connected to at least some nets, single-pin first and second imaginary devices. On any given net, a first imaginary device is associated with a tracking group property of the net (where nets in the same tracking group are in-phase) and a second imaginary device is associated with a voltage property of the net. A design layout generated based on the schematic diagram includes: net shapes representing the nets and, on net shapes that represent nets connected to the imaginary devices, tracking group and voltage labels corresponding to the tracking group and voltage properties. Net shape placement within the design layout and design rule checking are performed according to design rules that dictate placing net shapes with the same tracking group label together and further dictate minimum allowable spacing requirements depending upon the tracking group and voltage labels.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 19, 2019
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Heng Lan Lau, Manjunatha Prabhu, Vikrant Kumar Chauhan, Shawn Walsh
  • Patent number: 10236350
    Abstract: At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one M0 metal structure void is formed. At least one CB structure void adjacent the M0 metal structure void is formed. An etch process is performed the M0 and CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M0, CB, and CA structure voids are metallized.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: March 19, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Guillaume Bouche, Tuhin Guha Neogi, Sudharshanan Raghunathan, Andy Chi-Hung Wei, Jason Eugene Stephens, Vikrant Kumar Chauhan, David Michael Permana
  • Publication number: 20170263715
    Abstract: At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one M0 metal structure void is formed. At least one CB structure void adjacent the M0 metal structure void is formed. An etch process is performed the M0 and CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M0, CB, and CA structure voids are metallized.
    Type: Application
    Filed: March 11, 2016
    Publication date: September 14, 2017
    Inventors: Guillaume Bouche, Tuhin Guha Neogi, Sudharshanan Raghunathan, Andy Chi-Hung Wei, Jason Eugene Stephens, Vikrant Kumar Chauhan, David Michael Permana