Patents by Inventor Vikrant Rai

Vikrant Rai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240003008
    Abstract: A precursor dispensing system includes a source, an ampoule, a first valve, a second valve, a line charge volume container and a controller. The source supplies a liquid precursor. The ampoule receives the liquid precursor from the source. The first valve adjusts flow of the liquid precursor from the source to the ampoule. The second valve adjusts flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber. The line charge volume container is connected to a conduit and stores a charge of the precursor vapor, where the conduit extends from the ampoule to the second valve. The controller: opens the first valve and closes the second valve to precharge the line charge volume container; and during a dose operation, open the second valve to dispense a bulk amount of the precursor vapor from the line charge volume container and into the substrate processing chamber.
    Type: Application
    Filed: December 1, 2021
    Publication date: January 4, 2024
    Inventors: Saangrut SANGPLUG, Aaron DURBIN, Murthi MURUGAIYAN, Aaron Blake MILLER, Huatan QIU, Gopinath BHIMARASETTI, Vikrant RAI, Vincent WILSON
  • Patent number: 11832533
    Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: November 28, 2023
    Assignee: Lam Research Corporation
    Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
  • Publication number: 20220115592
    Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
    Type: Application
    Filed: December 20, 2021
    Publication date: April 14, 2022
    Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
  • Patent number: 11239420
    Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: February 1, 2022
    Assignee: Lam Research Corporation
    Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
  • Publication number: 20210384028
    Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.
    Type: Application
    Filed: October 11, 2019
    Publication date: December 9, 2021
    Inventors: James S. SIMS, Shane TANG, Vikrant RAI, Andrew MCKERROW, Huatan QIU
  • Publication number: 20200066987
    Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
    Type: Application
    Filed: August 24, 2018
    Publication date: February 27, 2020
    Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
  • Patent number: 10019648
    Abstract: Image classification based on a calculated camera-to-object distance is described. The camera-to-object distance is calculated based in part on a ratio of a measured dimension of an identified feature in the digital image compared to a known physical dimension of the identified feature in real life. A human anatomical constant, such as a dimension of the human eye, may be used as the feature to calculate the camera-to-object distance. The camera-to-object distance can be used to classify the digital image, such as by determining whether the image is a selfie. The camera-to-object distance may also be used for image editing operations to be performed on the digital image.
    Type: Grant
    Filed: December 9, 2015
    Date of Patent: July 10, 2018
    Assignee: ADOBE SYSTEMS INCORPORATED
    Inventors: Samartha Vashishtha, Vikrant Rai
  • Patent number: 9712569
    Abstract: A computer implemented method and apparatus for timeline-synchronized note taking during a web conference. The method comprises receiving a note from a user in a web conference; generating metadata that identifies a timestamp in the web conference when the note was created and a user identifier of the user who authored the note; and storing the note and the metadata with a recording of the web conference.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: July 18, 2017
    Assignee: ADOBE SYSTEMS INCORPORATED
    Inventors: Samartha Vashishtha, Vikrant Rai, Gaurav Gupta, Aman Kumar Gupta, Gaurav Satija
  • Publication number: 20170169570
    Abstract: Image classification based on a calculated camera-to-object distance is described. The camera-to-object distance is calculated based in part on a ratio of a measured dimension of an identified feature in the digital image compared to a known physical dimension of the identified feature in real life. A human anatomical constant, such as a dimension of the human eye, may be used as the feature to calculate the camera-to-object distance. The camera-to-object distance can be used to classify the digital image, such as by determining whether the image is a selfie. The camera-to-object distance may also be used for image editing operations to be performed on the digital image.
    Type: Application
    Filed: December 9, 2015
    Publication date: June 15, 2017
    Inventors: Samartha Vashishtha, Vikrant Rai
  • Publication number: 20150373063
    Abstract: A computer implemented method and apparatus for timeline-synchronized note taking during a web conference. The method comprises receiving a note from a user in a web conference; generating metadata that identifies a timestamp in the web conference when the note was created and a user identifier of the user who authored the note; and storing the note and the metadata with a recording of the web conference.
    Type: Application
    Filed: June 23, 2014
    Publication date: December 24, 2015
    Inventors: Samartha Vashishtha, Vikrant Rai, Gaurav Gupta, Aman Kumar Gupta, Gaurav Satija