Patents by Inventor Vikrant Rai
Vikrant Rai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20260185225Abstract: A precursor dispensing system includes: a source supplying a liquid precursor; a ampoule receiving the liquid precursor from the source; a first valve connected between the source and the ampoule and adjusting flow of the liquid precursor from the source to the ampoule; a second valve connected downstream from the ampoule and adjusting flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber; a conduit extending from the ampoule to the second valve; and a line charge volume (LCV) container connected to the conduit and storing a charge of the precursor vapor, where the LCV container has only a single port through which the precursor vapor flows, a larger inner volume than the conduit, a larger inner diameter than the conduit, and a larger inner cross-sectional area than the conduit.Type: ApplicationFiled: February 18, 2026Publication date: July 2, 2026Inventors: Saangrut SANGPLUNG, Aaron DURBIN, Murthi MURUGAIYAN, Aaron Blake MILLER, Huatan QIU, Gopinath BHIMARASETTI, Vikrant RAI, Vincent WILSON
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Patent number: 12577666Abstract: A precursor dispensing system includes a source, an ampoule, a first valve, a second valve, a line charge volume container and a controller. The source supplies a liquid precursor. The ampoule receives the liquid precursor from the source. The first valve adjusts flow of the liquid precursor from the source to the ampoule. The second valve adjusts flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber. The line charge volume container is connected to a conduit and stores a charge of the precursor vapor, where the conduit extends from the ampoule to the second valve. The controller: opens the first valve and closes the second valve to precharge the line charge volume container; and during a dose operation, open the second valve to dispense a bulk amount of the precursor vapor from the line charge volume container and into the substrate processing chamber.Type: GrantFiled: December 1, 2021Date of Patent: March 17, 2026Assignee: Lam Research CorporationInventors: Saangrut Sangplug, Aaron Durbin, Murthi Murugaiyan, Aaron Blake Miller, Huatan Qiu, Gopinath Bhimarasetti, Vikrant Rai, Vincent Wilson
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Patent number: 12230495Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.Type: GrantFiled: October 11, 2019Date of Patent: February 18, 2025Assignee: LAM RESEARCH CORPORATIONInventors: James S. Sims, Shane Tang, Vikrant Rai, Andrew McKerrow, Huatan Qiu
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Publication number: 20240003008Abstract: A precursor dispensing system includes a source, an ampoule, a first valve, a second valve, a line charge volume container and a controller. The source supplies a liquid precursor. The ampoule receives the liquid precursor from the source. The first valve adjusts flow of the liquid precursor from the source to the ampoule. The second valve adjusts flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber. The line charge volume container is connected to a conduit and stores a charge of the precursor vapor, where the conduit extends from the ampoule to the second valve. The controller: opens the first valve and closes the second valve to precharge the line charge volume container; and during a dose operation, open the second valve to dispense a bulk amount of the precursor vapor from the line charge volume container and into the substrate processing chamber.Type: ApplicationFiled: December 1, 2021Publication date: January 4, 2024Inventors: Saangrut SANGPLUG, Aaron DURBIN, Murthi MURUGAIYAN, Aaron Blake MILLER, Huatan QIU, Gopinath BHIMARASETTI, Vikrant RAI, Vincent WILSON
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Patent number: 11832533Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: December 20, 2021Date of Patent: November 28, 2023Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20220115592Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: December 20, 2021Publication date: April 14, 2022Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Patent number: 11239420Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: August 24, 2018Date of Patent: February 1, 2022Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20210384028Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.Type: ApplicationFiled: October 11, 2019Publication date: December 9, 2021Inventors: James S. SIMS, Shane TANG, Vikrant RAI, Andrew MCKERROW, Huatan QIU
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Publication number: 20200066987Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: August 24, 2018Publication date: February 27, 2020Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Patent number: 10019648Abstract: Image classification based on a calculated camera-to-object distance is described. The camera-to-object distance is calculated based in part on a ratio of a measured dimension of an identified feature in the digital image compared to a known physical dimension of the identified feature in real life. A human anatomical constant, such as a dimension of the human eye, may be used as the feature to calculate the camera-to-object distance. The camera-to-object distance can be used to classify the digital image, such as by determining whether the image is a selfie. The camera-to-object distance may also be used for image editing operations to be performed on the digital image.Type: GrantFiled: December 9, 2015Date of Patent: July 10, 2018Assignee: ADOBE SYSTEMS INCORPORATEDInventors: Samartha Vashishtha, Vikrant Rai
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Patent number: 9712569Abstract: A computer implemented method and apparatus for timeline-synchronized note taking during a web conference. The method comprises receiving a note from a user in a web conference; generating metadata that identifies a timestamp in the web conference when the note was created and a user identifier of the user who authored the note; and storing the note and the metadata with a recording of the web conference.Type: GrantFiled: June 23, 2014Date of Patent: July 18, 2017Assignee: ADOBE SYSTEMS INCORPORATEDInventors: Samartha Vashishtha, Vikrant Rai, Gaurav Gupta, Aman Kumar Gupta, Gaurav Satija
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Publication number: 20170169570Abstract: Image classification based on a calculated camera-to-object distance is described. The camera-to-object distance is calculated based in part on a ratio of a measured dimension of an identified feature in the digital image compared to a known physical dimension of the identified feature in real life. A human anatomical constant, such as a dimension of the human eye, may be used as the feature to calculate the camera-to-object distance. The camera-to-object distance can be used to classify the digital image, such as by determining whether the image is a selfie. The camera-to-object distance may also be used for image editing operations to be performed on the digital image.Type: ApplicationFiled: December 9, 2015Publication date: June 15, 2017Inventors: Samartha Vashishtha, Vikrant Rai
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Publication number: 20150373063Abstract: A computer implemented method and apparatus for timeline-synchronized note taking during a web conference. The method comprises receiving a note from a user in a web conference; generating metadata that identifies a timestamp in the web conference when the note was created and a user identifier of the user who authored the note; and storing the note and the metadata with a recording of the web conference.Type: ApplicationFiled: June 23, 2014Publication date: December 24, 2015Inventors: Samartha Vashishtha, Vikrant Rai, Gaurav Gupta, Aman Kumar Gupta, Gaurav Satija