Abstract: A method is described. The method includes receiving system level power information. The method includes causing a power supply unit's voltage conversion switching frequency to change based on the system level power information. The power supply unit supplies power to a system that includes at least a processor and memory. The system level power information describes power consumed by at least the processor and memory.

Abstract: An apparatus of a computing node of a computing network, a method to be performed at the apparatus, one or more computer-readable storage media storing instructions to be implemented at the apparatus, and a system including the apparatus. The apparatus includes a processing circuitry to: receive, from an orchestration block, a first workload (WL) package including a WL and first computing resource (CR) metadata; recompose the first WL package into a second WL package that includes the WL and second CR metadata that is different from the first CR metadata, is based at least in part on CR information regarding a server architecture onto which the WL is to be deployed, and is further to indicate one or more processors of the server architecture onto which the WL is to be deployed; and send the second WL package to one or more processors of the server architecture for deployment of the WL thereon.

Abstract: Examples described herein relate to an interface and a network interface device coupled to the interface and comprising circuitry to: control power utilization by a first set of one or more devices based on power available to a system that includes the first set of one or more devices, wherein the system is communicatively coupled to the network interface and control cooling applied to the first set of one or more devices.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, and a die, electrically coupled to the package substrate, including a silicon substrate having a first surface and an opposing second surface; a device layer at the first surface of the silicon substrate; and a dielectric layer, having a heater trace, at the second surface of the silicon substrate.