Abstract: In a microwave hybrid integrated circuit a metallized recess (8) is formed on the back or face side of a board (1) of the metallization of which recess serves as a bottom plate (6) of a capacitor (5), a remaining portion (9) of the board (1) under the recess (8) serves as the dielectric of the capacitor (5), and a top plate (7) thereof is situated on the face side of the board (1) and makes part of a topological metallization pattern (2), the remaining portion of the thickness of the board (1) in the recess (8) being of 1 to 400 &mgr;m.

Abstract: The essence of the method resides in that a recess (2) is made in the mounting surface, having the dimensions exceeding those of a chip (3). The chip (3) is gripped with a gripping member appearing as a tool (4) having a flat end and a capillary hole (5) flaring up towards the tool end, and is oriented above the recess (2). Before pressing the chip (3) into the recess (2) a dosed amount of a binder (6) is placed therein. The chip (3) is pressed into the binder (6) until the part of the flat end of the tool (4) which extends beyond the outlines of the chip (3) thrusts against the mounting surface. The pressing-in procedure is stopped as soon as the face surface of the chip (3) is coincided with the surface on which the recess (2) is made, whereupon the gripping tool is disengaged.

Abstract: The microwave hybrid integrated circuit, is providing having a dielectric board (1) provided with a topological metallization pattern (2) and a number of recesses (3) in which semiconductor chips (5) are fixed with a binder (4). The face surface of the chips (5) provided with contact pads (6) are coplanar with the surface of the board (1), and the contact pads (6) of the chips (5) are electrically connected to the topological metallization pattern (2). The walls of the recesses (3) are inclined towards the plane of the board (1) at an angle (&agr;) of 90.1 to 150°.

Abstract: A hybrid integrated circuit of a gas sensor, comprising a substrate (1) in the form of a ring-shaped peripheral portion (2) and a disk-shaped central portion (3), both being interconnected through three jumpers (4) spaced 120° apart and having three branchings (10) arranged at 120° at the peripheral portion (2). The central portion (3) carries a gas-sensitive film (7), a film heater (6), and a film electrode (8) of the circuit for measuring the resistance of the gas-sensitive film (7). The heater (6) and the electrode (8) are electrically connected along the jumpers (4) to bonding pads (5) located in the peripheral portion (2). The thickness of the jumpers (4) and of the central portion (3) is 0.15-0.25 mm, and the width of the jumpers (4) is 0.05-0.15 mm.

Abstract: The circuit comprises a dielectric board (1) metallized on both sides and comprising a topological metallization pattern (2) on the face side thereof and with at least one mounting pad (3) located in a recess (4) of the face side of the board (1) on a heat sink (5). A naked electronic chip (9) is placed on and fixed to a mounting pad (3) in such a manner that its face surface is coplanar with the topological metallization pattern (2). The heat sink (5) is essentially a system of blind holes (6) provided in the bottom of the recess (4) and filled with a heat conducting material (10). The remained thickness of the bottom of the blind holes (6) is from 1 to 999 .mu.m. Spaces between the chip (9) and the side walls of the recess (4) are filled at least partially with the heat conducting binder (10). The back side of the board (1) is joined with the heat conducting base (7).

Abstract: In a power microwave hybrid integrated circuit, a depth of recesses (2) in a metal base (1) is selected so that a face surface of chips (3) and a metal base (1) are coplanar, a dielectric board (5) has a shield ground metallization (10) on its back side at the places adjoining the metal base (1), the metal base (1) is sealingly joined and electrically connected to the shield grounding metallization (10) of the board (5), and interconnecting holes (7) of the board (5) are filled with an electrically conducting material (9), the spacing between the side surfaces of the chips (3) and the side surfaces of the recesses (2) in the base (1) being of 0.001 to 0.2 mm.

Abstract: In a power microwave hybrid integrated circuit, a recess (10) is formed on the back side of a board (5) under a projection (2) of a base (1), the recess (10) having holes (11) of a definite size in the bottom thereof, while the upper portion of the projection (2) of the base (1) not occupied with a chip (3) is electrically connected to the bottom of the recess (10), a grounding of a portion of bonding pads (4) of the chip (3) being performed through the holes (11) in the bottom of the recess (10), the spacing between the chip (3) and the walls of a hole (8) for mounting the chip (3) being less than 150 .mu.m and the grounding hole (11) being less than 150 .mu.m.

Abstract: The microwave hybrid integrated circuit comprises a dielectric board (1) provided with a topological metallization pattern (2) on its face side, a shield grounding metallization (3) on the back side thereof, a hole (4), and a metal base (5) having a projection (6). The hole (4) in the board (1) has a constriction (9) situated at a height of 1 to 300 .mu.m from the face surface of the board (1). The projection (6) is located in a wide section (10) of the hole (4). Bonding pads (8) of a chip (7) which are to be grounded are electrically connected to the projection (6) through the constricted portion (9) of the hole (4) which is filled with an electrically and heat conducting material (11). The wide section (10) of the hole (4) is from 0.2.times.0.2 mm to the size of the chip (7), and the distance between the side walls of the projection (6) and the side walls of the wide section (10) of the hole (4) is 0.001 to 1.0 mm.