Abstract: The proposed method of making semiconductor integrated circuits comprises sequential formation on a p-substrate of a first layer of n-regions, an epitaxial p-layer, a second layer of n-regions with an oxide layer, a third layer of p- and n-regions formed by opening holes in the oxides layer and ionic implantation of appropriate dopants, as well as deep diffusion of the latter, conducted in an inert medium, the final step being interconnection metallization. A semiconductor integrated circuit thus produced comprises p-resistors based on a portion of the epitaxial p-layer, confined by n-regions, n-p-n transistors each having a collector isolating it from the other circuit components and based on n-regions of the first and second layers, a base formed by a portion of the epitaxial p-layer and confined by the collector region, and an emitter in the form of an n-region of the third layer, made in the base region.