Abstract: A semiconductor matrix for an integrated read-only storage is disclosed which comprises a plurality of components each of which is provided with a semiconductor region of a first type conductivity, at least some components of said components each having a semiconductor region of a second type conductivity disposed in said first type conductivity semiconductor region. Said components are formed at the locations where semiconductor buses of said first type conductivity, made in a substrate, intersect metallic buses disposed on a dielectric layer which is adapted to isolate the semiconductor buses from the metallic ones. There are windows comprising openings which register with them and are adapted to provide for electric contact between the second type conductivity semiconductor regions and the metallic buses, said windows are formed in the dielectric layer above said second type conductivity semiconductor regions of respective components.